Light-emitting device and method of manufacturing thereof

• US 9,614,127 B2
• Filed: 07/05/2013
• Issued: 04/04/2017
• Est. Priority Date: 07/05/2013
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Huang, Chien-Fu, Chan, Yao-Ning, Hsu, Tzu Chieh, Chen, Yi Ming, Chiu, Hsin-Chih, Lu, Chih-Chiang, Hsu, Chia-Liang, Chang, Chun-Hsien
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US14/902,795
• Publication Number:
  US 20160218247A1
• Time in Patent Office: 1,369 Days
• Field of Search: None
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

Claims

1. A method of manufacturing a light-emitting device, which comprises:

providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer;

wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μ

m; and

conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate;

wherein the first separating step further comprises;

providing a second substrate comprising a first electrode;

conducting a first bonding step to bond the first semiconductor stacked block to the second substrate; and

separating the first semiconductor stacked block from the first substrate.

2. The method of manufacturing a light-emitting device of claim 1, wherein the second substrate further comprises a second electrode.

3. The method of manufacturing a light-emitting device of claim 1, further comprises:

forming a first conductive connecting line and a second conductive connecting line, wherein the first conductive connecting line electrically connects the first conductive-type semiconductor layer of the first semiconductor stacked block to the first electrode, and the second conductive connecting line electrically connects the second semiconductor-type semiconductor layer of the first semiconductor stacked block to the second electrode; and

forming a transparent encapsulated material on the second substrate, wherein the transparent encapsulated material covers the first semiconductor stacked block, the first conductive connecting line, and the second conductive connection line.

4. The method of manufacturing a light-emitting device of claim 1, wherein the first bonding step comprising bonding and aligning the first semiconductor stacked block with the second substrate in order to align the first semiconductor stacked block with the first electrode and form electrical connection between the first semiconductor stacked block and the first electrode.

5. The method of manufacturing a light-emitting device of claim 1, further comprises conducting a second bonding step to bond and align the first semiconductor stacked block with the second semiconductor stacked block;

and

separating the second semiconductor stacked block from the first substrate.

6. The method of manufacturing a light-emitting device of claim 5, further comprises forming a conductive oxide layer on each of the first semiconductor stacked block and the second semiconductor stacked block before the second bonding step.

7. The method of manufacturing a light-emitting device of claim 5, further comprises forming an electrode on the second substrate and electrically connecting the electrode to the second semiconductor stacked block.

8. The method of manufacturing a light-emitting device of claim 5, further comprises forming a metal layer on at least one of the first semiconductor stacked block and the second semiconductor stacked block before the second bonding step.

9. The method of manufacturing a light-emitting device of claim 1, wherein the first substrate further comprises a third semiconductor stacked block and a fourth semiconductor stacked block, and the first bonding step further comprises bonding the third semiconductor stacked block to the second substrate, and the first separating step further comprises separating the third semiconductor stacked block from the first substrate and keeping the fourth semiconductor stacked block on the first substrate.

10. The method of manufacturing a light-emitting device of claim 9, wherein a first electrode and a second electrode are formed on each of the second semiconductor stacked block and the fourth semiconductor stacked block, and the first electrode and the second electrode electrically connect to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer of the second semiconductor stacked block and the fourth semiconductor stacked block respectively.

11. The method of manufacturing a light-emitting device of claim 10, further comprises:

providing a third substrate comprising a patterned metal layer; and

conducting a second bonding step to bond and align the patterned metal layer of the third substrate with the first electrode and the second electrode of the second semiconductor stacked block and the fourth semiconductor stacked block in order to form series connection or parallel connection between the second semiconductor stacked block and the fourth semiconductor stack block.

12. The method of manufacturing a light-emitting device of claim 1, wherein the first electrode is a via electrode.

13. A method of manufacturing a light-emitting device, which comprises:

providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer;

wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μ

m;

conducting a first separating step to separate a first semiconductor stacked block and a third semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block and a fourth semiconductor stacked block on the first substrate; and

forming a first electrode and a second electrode on each of the second semiconductor stacked block and the fourth semiconductor stacked block, and the first electrode and the second electrode electrically connect to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer of the second semiconductor stacked block and the fourth semiconductor stacked block respectively;

wherein the first separating step further comprises;

providing a second substrate;

conducting a first bonding step to bond the first semiconductor stacked block and the a third semiconductor stacked block to the second substrate; and

separating the first semiconductor stacked block and the a third semiconductor stacked block from the first substrate.

14. The method of manufacturing a light-emitting device of claim 13, wherein the second substrate further comprises a third electrode.

15. The method of manufacturing a light-emitting device of claim 14, wherein the second substrate further comprises a fourth electrode.

16. The method of manufacturing a light-emitting device of claim 15, wherein the first bonding step comprising bonding and aligning the first semiconductor stacked block with the second substrate in order to locate the first semiconductor stacked block between the third electrode and the fourth electrode.

17. The method of manufacturing a light-emitting device of claim 14, wherein the first bonding step comprising bonding and aligning the first semiconductor stacked block with the second substrate in order to align the first semiconductor stacked block with the third electrode and form electrical connection between the first semiconductor stacked block and the third electrode.

18. The method of manufacturing a light-emitting device of claim 13, further comprises conducting a second bonding step to bond and align the first semiconductor stacked block with the second semiconductor stacked block.

19. The method of manufacturing a light-emitting device of claim 18, further comprises:

separating the second semiconductor stacked block from the first substrate after the second bonding step;

providing a third substrate comprising a third electrode;

conducting a third bonding step to bond and align the second semiconductor stacked block with the third substrate in order to align the second semiconductor stacked block with the third electrode and form electrical connection between the second semiconductor stacked block and the third electrode; and

separating the first semiconductor stacked block from the second substrate.

20. The method of manufacturing a light-emitting device of claim 13, further comprises:

providing a third substrate comprising a patterned metal layer; and

conducting a second bonding step to bond and align the patterned metal layer of the third substrate with the first electrode and the second electrode of the second semiconductor stacked block and the fourth semiconductor stacked block in order to form series connection or parallel connection between the second semiconductor stacked block and the fourth semiconductor stack block.