Apparatus and method to monitor thermal runaway in a semiconductor device

• US 9,618,560 B2
• Filed: 07/01/2015
• Issued: 04/11/2017
• Est. Priority Date: 07/01/2015
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Zhao, Sam Ziqun
• Primary Examiner(s): NGUYEN, VINH P
• Application Number:
  US14/789,624
• Publication Number:
  US 20170003339A1
• Time in Patent Office: 650 Days
• CPC Class Codes: G01R 31/2628 for measuring thermal properties thereof
• CPC Class Codes: G01R 31/2872 related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
• CPC Class Codes: G01R 31/3008 Quiescent current [IDDQ] test or leakage current test
• CPC Class Codes: G01R 31/3012 Built-In-Current test [BIC]

Abstract

An apparatus and methods are provided that more accurately detect the onset of thermal runaway in a device and timely control it. According to one embodiment, changes in stand-by current and temperature of a transistor device are measured and are used to be compared to some thresholds to trigger the device to respond before the onset thermal runaway. According to another embodiment, stand-by current is measured and is compared to some thresholds to trigger the device to respond before the onset thermal runaway.

Claims

1. A semiconductor-based apparatus, comprising:

a semiconductor device;

a current sensor configured to measure a first stand-by current and a second stand-by current of the semiconductor device;

a temperature sensor configured to measure a first temperature and a second temperature of the semiconductor device; and

a thermal runaway monitor, configured to;

determine a ratio of a first difference relative to a second difference, the first difference being between the first stand-by current and the second stand-by current of the semiconductor device, and the second difference being between the first temperature and the second temperature of the semiconductor device; and

determine whether a thermal runaway onset condition exists based on the ratio.

2. The semiconductor-based apparatus of claim 1, wherein the current sensor is configured to measure the first stand-by current and the second stand-by current of the semiconductor device at respective first and second instances in time.

3. The semiconductor-based apparatus of claim 2, wherein the temperature sensor is configured to measure the first temperature and the second temperature of the semiconductor device at the respective first and second instances in time.

4. The semiconductor-based apparatus of claim 1, wherein the thermal runaway monitor is further configured to determine a parameter by dividing the ratio by an inverse of a product, the product being a multiplication of a supply voltage of the semiconductor device and a junction-to-ambient thermal resistance of the semiconductor device.

5. The semiconductor-based apparatus of claim 4, wherein the thermal runaway monitor is further configured to:

compare the parameter with a preset upper control limit value; and

determine that the thermal runaway onset condition exists when the parameter is greater than or equal to the preset upper control limit value.

6. The semiconductor-based apparatus of claim 5, wherein the thermal runaway monitor is further configured to:

compare the parameter with a preset lower control limit value when the parameter is less than the preset upper control limit value;

if the parameter is greater than or equal to the preset lower control limit value, calculate an active power scaling factor; and

send a request to the semiconductor device to reduce its active mode power by the active power scaling factor.

7. The semiconductor-based apparatus of claim 5, wherein the thermal runaway monitor is further configured to send a message to a host processor of the semiconductor-based apparatus upon determination that the thermal runaway onset condition exists.

8. The semiconductor-based apparatus of claim 5, wherein the thermal runaway monitor comprises a counter, and the thermal runaway monitor is further configured to:

send a request to the semiconductor device to reduce its active mode power when the thermal runaway onset condition exists;

increase a value of the counter by one when the thermal runaway onset condition exists;

compare the value of the counter to a predetermined threshold; and

send a power off signal to the semiconductor device to turn off the semiconductor device when the value of the counter is greater than the predetermined threshold.

9. The semiconductor-based apparatus of claim 1, wherein the thermal runaway monitor is further configured to send a request to the semiconductor device to reduce its active mode power when the thermal runaway onset condition exists.

10. A method, comprising:

measuring, using a current sensor, a first stand-by current and a second stand-by current of a semiconductor device;

measuring, using a temperature sensor, a first temperature and a second temperature of the semiconductor device;

determining, using a thermal runaway monitor, a ratio of a first difference relative to a second difference, the first difference being between the first stand-by current and the second stand-by current of the semiconductor device, and the second difference being between the first temperature and the second temperature of the semiconductor device; and

determining, using the thermal runaway monitor, whether a thermal runaway onset condition exists based on the ratio.

11. The method of claim 10, wherein the measuring the first stand-by current and the second stand-by current of the semiconductor device is at respective first and second instances in time.

12. The method of claim 11, wherein the measuring the first temperature and the second temperature of the semiconductor device is at the respective first and second instances in time.

13. The method of claim 10, further comprising:

determining a parameter by dividing the ratio by an inverse of a product, the product being a multiplication of a supply voltage of the semiconductor device and a junction-to-ambient thermal resistance of the semiconductor device.

14. The method of claim 13, further comprising:

comparing the parameter with a preset upper control limit value; and

determining that the thermal runaway onset condition exists if the parameter is greater than or equal to the preset upper control limit value.

15. The method of claim 14, wherein the thermal runaway monitor comprises a counter, the method further comprising:

sending a request to the semiconductor device to reduce its active mode power when the thermal runaway onset condition exists;

increasing a value of the counter by one when the thermal runaway onset condition exists;

comparing the value of the counter to a predetermined threshold; and

sending a power off signal to the semiconductor device when the value of the counter is greater than the predetermined threshold to turn off the semiconductor device.

16. The method of claim 14, further comprising:

comparing the parameter with a preset lower control limit value when the parameter is less than the preset upper control limit value;

if the parameter is greater than or equal to the preset lower control limit value, calculating an active power scaling factor; and

sending a request to the semiconductor device to reduce its active mode power by the active power scaling factor.

17. The method of claim 10, further comprising:

sending a request to the semiconductor device to reduce its active mode power when the thermal runaway onset condition exists.

18. A semiconductor-based apparatus, comprising:

a semiconductor device;

a current sensor configured to measure a stand-by current of the semiconductor device; and

a thermal runaway monitor, configured to;

determine a ratio of the stand-by current to a leakage current thermal runaway threshold; and

determine whether a thermal runaway onset condition exists based on the ratio.

19. The semiconductor-based apparatus of claim 18, wherein the thermal runaway monitor is further configured to:

compare the ratio with a preset upper control limit value; and

determine that the thermal runaway onset condition exists when the ratio is greater than or equal to the preset upper control limit value.

20. The semiconductor-based apparatus of claim 19, wherein the thermal runaway monitor comprises a counter and the thermal runaway monitor is further configured to:

send a request to the semiconductor device to reduce its active mode power when the thermal runaway onset condition exists;

increase a value of the counter by one when the thermal runaway onset condition exists;

compare the value of the counter to a predetermined threshold; and

send a power off signal to the semiconductor device to turn off the semiconductor device when the value of the counter is greater than the predetermined threshold.

21. The semiconductor-based apparatus of claim 19, wherein the thermal runaway monitor is further configured to:

compare the ratio with a preset lower control limit value when the ratio is less than the preset upper control limit value;

if the ratio is greater than or equal to the preset lower control limit value, calculate an active power scaling factor; and

send a request to the semiconductor device to reduce its active mode power by the active power scaling factor.

22. A semiconductor-based apparatus, comprising:

a semiconductor device;

a current sensor configured to measure a stand-by current of the semiconductor device; and

a thermal runaway monitor, configured to;

obtain a leakage current model temperature coefficient;

determine a leakage current thermal runaway threshold based on the leakage current model temperature coefficient, a supply voltage of the semiconductor device, and a junction-to-ambient thermal resistance of the semiconductor device;

determine a ratio of the stand-by current to the leakage current thermal runaway threshold; and

determine whether a thermal runaway onset condition exists based on the ratio.