Method of making a semiconductor device having a functional capping

• US 9,620,390 B2
• Filed: 01/12/2016
• Issued: 04/11/2017
• Est. Priority Date: 11/19/2008
• Status: Active Grant

• Current Assignee: Silex Microsystems AB (Sai Microelectronics, Inc.)
• Original Assignee: Silex Microsystems AB (Sai Microelectronics, Inc.)
• Inventors: Ebefors, Thorbjorn, Kalvesten, Edvard, Bauer, Tomas
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US14/993,714
• Publication Number:
  US 20160122180A1
• Time in Patent Office: 455 Days
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2223/6622 Coaxial feed-throughs in active or passive substrates
• CPC Class Codes: H01L 2223/6655 Matching arrangements, e.g. arrangement of inductive and capacitive components
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/02371 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0239 Material of the redistribution layers
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05073 : Single internal layer
• CPC Class Codes: H01L 2224/05155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05548 : Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05573 : Single external layer
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/1146 : Plating
• CPC Class Codes: H01L 2224/13009 : Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13024 : the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29009 : Layer connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/29011 : comprising apertures or cavities
• CPC Class Codes: H01L 2224/29012 : in top view
• CPC Class Codes: H01L 2224/29018 : comprising protrusions or indentations
• CPC Class Codes: H01L 2224/29101 : the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/30051 : Layer connectors having different shapes
• CPC Class Codes: H01L 2224/3012 : Layout
• CPC Class Codes: H01L 2224/81005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 23/04 : characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/10 : characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 23/642 : Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 23/645 : Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/30 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.

Claims

1. Capping substrate for a semiconductor device, comprising a passive integrated component which is an inductance comprising a metal core and a winding comprising a combination of a plurality of via structures (11), arranged in arrays and extending through a substrate, and metal strips (12) which connect the via structures pair-wise;

wherein a first via located on one side of the metal core is coupled on the upper surface by at least one metal strip to an opposing via on the opposite side of the metal core and wherein said opposing via is interconnected on a bottom surface of the substrate by at least one metal strip with a second via adjacent to the first via, such that there is essentiallya continuous formation extending between and coupling the vias, thereby producing a conductor around the metal core;

wherein said via structures are coaxial metal through connections comprising at least one insulated metal through connection extending through the substrate;

at least one annular metal structure circumferentially surrounding said insulated metal through connection, and located at a finite radial distance therefrom.

2. Capping structure as claimed in claim 1, wherein the inductance is provided by an elongated metal core extending in the substrate and through it.

3. Capping structure as claimed in claim 2, wherein said core extends through the substrate thickness, and has an elongated shape, extending essentially in the plane of the substrate.

4. Capping structure as claimed in claim 2, wherein said core is made of Ni or a Ni/Co alloy.

5. Capping structure as claimed in claim 1, wherein there are double arrays of vias arranged in a staggered configuration.

6. Capping structure as claimed in claim 1, wherein there are triple or quadruple arrays of vias.

7. A micro-electronic and/or micro-mechanic device having a capping structure as claimed in claim 1.

8. The device as claimed in claim 7 which is a MEMS and/or CMOS device.