Image sensor with wide contact

• US 9,620,548 B1
• Filed: 10/30/2015
• Issued: 04/11/2017
• Est. Priority Date: 10/30/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Tzu-Jui, Yaung, Dun-Nian, Liu, Jen-Cheng, Hsu, Tzu-Hsuan, Yamashita, Yuichiro
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US14/928,604
• Publication Number:
  US 20170125473A1
• Time in Patent Office: 529 Days
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14614 having a special gate structure
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

An image sensor structure is provided. The image sensor structure includes a substrate including a first light sensing region and a second light sensing region. The image sensor structure further includes an isolation structure formed through the substrate to separate the first light sensing region and the second light sensing region and a first source/drain structure and a second source/drain structure formed at a front side of the substrate. In addition, the first source/drain structure and the second source/drain structure are located at opposite sides of the isolation structure. The image sensor structure further includes a contact formed over the isolation structure, a portion of the first source/drain structure, and a portion of the second source/drain structure.

Claims

1. An image sensor structure, comprising:

a substrate comprising a first light sensing region and a second light sensing region;

an isolation structure formed through the substrate to separate the first light sensing region and the second light sensing region;

a first source/drain structure and a second source/drain structure formed at a front side of the substrate, wherein the first source/drain structure and the second source/drain structure are located at opposite sides of the isolation structure;

a contact formed over the isolation structure, a portion of the first source/drain structure, and a portion of the second source/drain structure.

2. The image sensor structure as claimed in claim 1, wherein the isolation structure is made of silicon nitride, silicon oxide, or polysilicon.

3. The image sensor structure as claimed in claim 1, wherein the isolation structure extends from the front side of the substrate to a back side of the substrate.

4. The image sensor structure as claimed in claim 1, wherein a width of the isolation structure is smaller than a width of the contact.

5. The image sensor structure as claimed in claim 1, further comprising:

an interconnect structure formed over the front side of the substrate; and

a color filter layer formed over a back side of the substrate.

6. The image sensor structure as claimed in claim 1, further comprising:

a first gate structure formed adjacent to the first source/drain structure; and

a second gate structure formed adjacent to the second source/drain structure.

7. The image sensor structure as claimed in claim 6, wherein a shortest distance between a sidewall of the first gate structure and a sidewall of the isolation structure is smaller than 150 nm.

9. The image sensor structure as claimed in claim 7, further comprising:

a first hard mask structure formed over the first gate structure,

wherein a portion of the contact is formed on a portion of the first hard mask structure.

10. The image sensor structure as claimed in claim 7, further comprising:

an interconnect structure formed over a front side of the substrate;

a color filter layer formed over a back side of the substrate; and

a microlens layer formed over the color filter layer.

11. The image sensor structure as claimed in claim 7, wherein a width of the isolation structure is smaller than a width of the contact.

12. The image sensor structure as claimed in claim 7, wherein the contact is in direct contact with a top surface of the isolation structure, a portion of a top surface of the first source/drain structure, and a portion of a top surface of the second source/drain structure.

13. The image sensor structure as claimed in claim 7, wherein the isolation structure extends from a front side of the substrate to a back side of the substrate.

8. An image sensor structure, comprising:

a substrate;

an isolation structure formed through the substrate to divide the substrate into a first region and a second region;

a first light sensing region formed in the first region of the substrate;

a second light sensing region formed in the second region of the substrate;

a first gate structure formed over the first region of the substrate;

a second gate structure formed over the second region of the structure;

a first source/drain structure formed adjacent to the first gate structure;

a second source/drain structure formed adjacent to the second gate structure; and

a contact overlapping with the isolation structure, a portion of the first source/drain structure, and a portion of the second source/drain structure.

14. An image sensor structure, comprising:

a first light sensing region and a second light sensing region formed in a substrate;

an isolation structure formed through the substrate to separate the first light sensing region and the second light sensing region;

a first source/drain structure formed adjacent to the first light sensing region and a second source/drain structure formed adjacent to the second light sensing region; and

a contact formed on the isolation structure and extending on a portion of the first source/drain structure and a portion of the second source/drain structure.

15. The image sensor structure as claimed in claim 14, wherein the isolation structure is made of silicon nitride, silicon oxide, or polysilicon.

16. The image sensor structure as claimed in claim 14, wherein the isolation structure extends from a front side of the substrate to a back side of the substrate.

17. The image sensor structure as claimed in claim 14, wherein a width of the isolation structure is smaller than a width of the contact.

18. The image sensor structure as claimed in claim 14, further comprising:

an interconnect structure formed over a front side of the substrate; and

a color filter layer formed over a back side of the substrate.

19. The image sensor structure as claimed in claim 14, further comprising:

a first gate structure formed adjacent to the first source/drain structure,

wherein a portion of the contact overlaps with the first gate structure.

20. The image sensor structure as claimed in claim 19, further comprising:

a hard mask structure formed over the first gate structure,

wherein the first gate structure and the contact are separated by the hard mask structure.