Metal shielding layer in backside illumination image sensor chips and methods for forming the same

• US 9,620,555 B2
• Filed: 12/28/2015
• Issued: 04/11/2017
• Est. Priority Date: 11/30/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chang, Shih-Chieh, Tsai, Jian-Shin, Huang, Chih-Chang, Lee, Ing-Ju, Sun, Ching-Yao, Wu, Jyun-Ru, Huang, Ching-Che, Wu, Szu-An, Wang, Ying-Lang
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US14/981,124
• Publication Number:
  US 20160118434A1
• Time in Patent Office: 470 Days
• Field of Search: 438 71
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Claims

1. A method comprising:

forming a first photo-sensitive device and a second photo-sensitive device at a front surface of a semiconductor substrate;

forming a dielectric layer over a back surface of the semiconductor substrate;

depositing an adhesion layer over the dielectric layer, wherein the adhesion layer comprises a compound of nitrogen and a metal, and wherein substantially all grains in the adhesion layer are smaller than about 50 Å

;

forming a metal shielding layer over and contacting the adhesion layer, wherein the adhesion layer and the metal shielding layer are on a backside of the semiconductor substrate; and

patterning the adhesion layer and the metal shielding layer to remove a first portion of the adhesion layer and a first portion of the metal shielding layer, wherein a second portion of the adhesion layer and a second portion of the metal shielding layer remain over the dielectric layer after patterning the adhesion layer and the metal shielding layer.

2. The method of claim 1, wherein depositing the adhesion layer comprises using nitrogen (N₂) and argon as process gases, and wherein during depositing the adhesion layer, a flow-rate ratio of a flow rate of nitrogen to a combined flow rate of nitrogen and argon is greater than about 35 percent.

3. The method of claim 1, wherein depositing the adhesion layer comprises using nitrogen (N₂) and argon as process gases, and wherein during depositing the adhesion layer, a partial-pressure ratio of a partial pressure of nitrogen to a combined partial pressure of nitrogen and argon is greater than about 35 percent.

4. The method of claim 1, wherein the first portion of the adhesion layer and the first portion of the metal shielding layer are over and aligned to the first photo-sensitive device, and wherein the second portion of the adhesion layer and the second portion of the metal shielding layer are over and aligned to the second photo-sensitive device.

5. The method of claim 1, wherein the adhesion layer comprises tantalum nitride.

6. The method of claim 1, wherein depositing the adhesion layer comprises physical vapor deposition.

7. The method of claim 1 further comprising forming a passivation over and extending along sidewalls of the adhesion layer and the metal shielding layer.

8. The method of claim 1 further comprising forming one or more buffer layers between the adhesion layer and the semiconductor substrate.

9. The method of claim 1 further comprising forming one or more buffer layers over the metal shielding layer.

10. A method comprising:

providing a substrate comprising a first image sensor at a first surface;

depositing an adhesion layer over a second surface of the substrate opposite the first surface, wherein depositing the adhesion layer comprises;

using nitrogen and argon as process gases; and

controlling a flow-rate ratio of a flow-rate of nitrogen to a combined flow-rate of nitrogen and argon to be greater than about 35 percent;

depositing a metal shielding layer over the adhesion layer; and

patterning the adhesion layer and the metal shielding layer to remove portions of the adhesion layer and the metal shielding layer disposed directly over the first image sensor.

11. The method of claim 10, wherein the substrate comprises a second image sensor at the first surface, and wherein patterning the adhesion layer and the metal shielding layer comprises leaving portions of the adhesion layer and the metal shielding layer disposed directly over the second image sensor.

12. The method of claim 11, wherein the first image sensor is an active image sensor, and wherein the second image sensor is a black reference image sensor.

13. The method of claim 10, wherein the flow-rate ratio is less than about 80 percent.

14. The method of claim 10, wherein depositing the adhesion layer further comprises controlling a partial-pressure ratio of a partial pressure of nitrogen to a combined partial pressure of nitrogen and argon to be greater than about 35 percent.

15. The method of claim 10 further comprising depositing a dielectric layer on the second surface of the substrate, wherein depositing the adhesion layer further comprises depositing the adhesion layer over the dielectric layer.

16. The method of claim 10 further comprising:

forming one or more first buffer layers under the adhesion layer;

forming one or more second buffer layers over the metal shielding layer; and

patterning the one or more first buffer layers and the one or more second buffer layers to have sidewalls substantially aligned with sidewalls of the adhesion layer and the metal shielding layer after patterning the adhesion layer and the metal shielding layer.

17. A method comprising:

depositing a dielectric layer over a substrate, wherein the substrate comprises a first image sensor and a second image sensor at a surface opposing the dielectric layer;

depositing a first buffer layer over the dielectric layer;

depositing an adhesion layer over the first buffer layer, wherein depositing the adhesion layer comprises using argon and nitrogen as process gasses, and wherein a partial-pressure ratio of a partial pressure of nitrogen to a combined partial pressure of nitrogen and argon is greater than about 35 percent during depositing the adhesion layer;

depositing a metal shielding layer over the adhesion layer;

depositing a second buffer layer over the metal shielding layer; and

patterning the first buffer layer, the adhesion layer, the metal shielding layer, and the second buffer layer to remove first portions of the first buffer layer, the adhesion layer, the metal shielding layer, and the second buffer layer aligned with the first image sensor while not removing second portions of the first buffer layer, the adhesion layer, the metal shielding layer, and the second buffer layer aligned with the second image sensor.

18. The method of claim 17 further comprising forming a passivation layer over the second buffer layer and along sidewalls the first buffer layer, the adhesion layer, the metal shielding layer, and the second buffer layer.

19. The method of claim 17, wherein a flow-rate ratio of a flow-rate of nitrogen to a combined flow-rate of nitrogen and argon to be between about 35 percent to about 80 percent during depositing the adhesion layer.

20. The method of claim 17, wherein a grain size of the adhesion layer is about 50 Å

or less.