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Power semiconductor device with source trench and termination trench implants

  • US 9,620,583 B2
  • Filed: 09/16/2015
  • Issued: 04/11/2017
  • Est. Priority Date: 10/08/2014
  • Status: Active Grant
First Claim
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1. A power semiconductor device comprising:

  • a source region in a body region;

    a gate trench adjacent to said source region;

    a source trench electrically coupled to said source region, said source trench having a source trench conductive filler surrounded by a source trench dielectric liner, said source trench extending into a drift region;

    a source trench implant below said source trench, said source trench implant having a conductivity type opposite that of said drift region;

    said source trench being electrically insulated from said source trench implant by said source trench dielectric liner;

    a drain region below said drift region.

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