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Intergrated circuit devices including an interfacial dipole layer

  • US 9,620,612 B2
  • Filed: 02/19/2015
  • Issued: 04/11/2017
  • Est. Priority Date: 02/19/2015
  • Status: Expired due to Fees
First Claim
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1. An integrated circuit device, comprising:

  • a first transistor structure in a memory region of a die, the first transistor structure having a substrate and a first gate, the first gate including a dipole layer proximate to the substrate and a barrier layer proximate to the dipole layer; and

    a second transistor structure in a logic device region of the die, the second transistor structure having a second gate, the second gate including an interface layer, a dielectric layer, and a cap layer, the dielectric layer between the cap layer and the interface layer.

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