Organic light emitting display devices and methods of manufacturing organic light emitting display devices

• US 9,620,613 B2
• Filed: 05/26/2015
• Issued: 04/11/2017
• Est. Priority Date: 07/18/2014
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Park, Sang-Ho, Jang, Jae-Hyuk, Kim, Chang-Ok, Yoon, Joo-Sun, Jang, Yong-Jae
• Primary Examiner(s): Nguyen, Khiem D
• Assistant Examiner(s): Vu, Pauline
• Application Number:
  US14/721,952
• Publication Number:
  US 20160020266A1
• Time in Patent Office: 686 Days
• CPC Class Codes: H01L 27/1237 with a different composition, shape, layout or thickness of the gate insulator in different devices
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

An organic light emitting display device includes a substrate, a first transistor disposed on the substrate in the opaque region, a second transistor disposed on the substrate in the opaque region, the second transistor being adjacent to the first transistor along a first direction, and a capacitor disposed on the substrate in the opaque region, the capacitor being adjacent to the first transistor along a second direction different from the first direction. Here, the capacitor may include a first capacitor electrode, a dielectric structure including silicon oxynitride and a second capacitor electrode.

Claims

1. An organic light emitting display device having an opaque region and a transparent region, which comprises:

a substrate;

a first transistor disposed on the substrate in the opaque region;

a second transistor disposed on the substrate in the opaque region, the second transistor being adjacent to the first transistor; and

a capacitor disposed on the substrate in the opaque region, the capacitor being adjacent to the first transistor,

wherein the capacitor includes a first capacitor electrode, a dielectric structure including silicon oxynitride and a second capacitor electrode,

wherein the first transistor comprises;

a first active pattern disposed on the substrate in the opaque region;

a first gate insulation layer disposed on the first active pattern, the first gate insulation layer extending into the transparent region;

a second gate insulation layer including silicon oxynitride disposed on the first gate insulation layer, the second gate insulation layer extending into the transparent region;

a first gate electrode disposed on the second gate insulation layer;

a first source electrode contacting the first active pattern, the first source electrode extending along a first direction parallel to the substrate; and

a first drain electrode contacting the first active pattern, wherein the second transistor comprises;

a second active pattern disposed on the substrate in the opaque region;

the first gate insulation layer being disposed on the second active pattern;

a second gate electrode disposed on the first gate insulation layer;

the second gate insulation layer being disposed on the second gate electrode; and

a second source electrode and a second drain electrode contacting the second active pattern.

2. The organic light emitting display device of claim 1, wherein the first capacitor electrode is disposed over the first gate insulation layer.

3. The organic light emitting display device of claim 1, wherein the dielectric structure includes a portion of the second gate insulation layer.

4. The organic light emitting display device of claim 1, wherein the second capacitor electrode is disposed on the second gate insulation layer, and is spaced apart from the first gate electrode along the first direction.

5. The organic light emitting display device of claim 1, wherein the second capacitor electrode contacts an extended portion of the first source electrode.

6. The organic light emitting display device of claim 1, wherein the first capacitor electrode is disposed on the first gate insulation layer, and is spaced apart from the second gate electrode along the first direction.

7. The organic light emitting display device of claim 1, further comprising:

an insulating interlayer covering the first gate electrode, the insulating interlayer including silicon oxide; and

a data line disposed on the insulating interlayer, the data line being spaced apart from the first source electrode along the first direction.

8. The organic light emitting display device of claim 7, further comprising:

an additional capacitor disposed on the capacitor.

9. The organic light emitting display device of claim 8, wherein the additional capacitor comprises:

a first additional capacitor electrode positioned at a level same as that of the first gate electrode;

an additional dielectric structure disposed on the first additional capacitor electrode, the additional dielectric structure including a portion of the insulating interlayer; and

a second additional capacitor electrode disposed on the additional dielectric structure, the second additional capacitor electrode including a portion of the data line.

10. The organic light emitting display device of claim 1, further comprising:

an insulation layer disposed on the first transistor, the second transistor and the capacitor, the insulation layer having an opening extending to the transparent region;

a first electrode disposed on the insulation layer;

an organic light emitting structure disposed on the first electrode; and

a second electrode disposed on the organic light emitting structure.

15. The organic light emitting display device of claim 1, wherein a nitrogen content of the silicon oxynitride in the dielectric structure is less than 25%.

11. A method of manufacturing an organic light emitting display device including an opaque region and a transparent region, which comprises:

forming a first transistor on a substrate in the opaque region;

forming a second transistor on the substrate in the opaque region, the second transistor being adjacent to the first transistor; and

forming a capacitor on the substrate in the opaque region, the capacitor being adjacent to the first transistor,

wherein the capacitor includes a first capacitor electrode, a dielectric structure including silicon oxynitride and a second capacitor electrode, wherein forming the first transistor comprises;

forming a first active pattern on the substrate in the opaque region;

forming a first gate insulation layer covering the first active pattern and extending into the transparent region;

forming a second gate insulation layer including silicon oxynitride on the first gate insulation layer, the second gate insulation layer extending into the transparent region;

forming a first gate electrode on the second gate insulation layer;

forming a first source electrode contacting the first active pattern and extending along a first direction parallel to the substrate; and

forming a first drain electrode contacting the first active pattern,

wherein the second gate insulation layer and the dielectric structure are simultaneously formed, and the first gate electrode and the second capacitor electrode are simultaneously formed, wherein forming the second transistor comprises;

forming a second active pattern on the substrate in the opaque region;

forming the first gate insulation layer covering the second active pattern;

forming a second gate electrode on the first gate insulation layer;

forming the second gate insulation layer covering the second gate electrode;

forming a second source electrode contacting the second active pattern; and

forming a second drain electrode contacting the second active pattern,

wherein the second gate electrode and the first capacitor electrode are simultaneously formed.

12. The method of claim 11, further comprising:

forming an insulating interlayer covering the first gate electrode using silicon oxide; and

forming a data line on the insulating interlayer, the data line being spaced apart from the first source electrode along the first direction.

13. The method of claim 12, further comprising:

forming an additional capacitor including a first additional capacitor electrode located at a level same as that of the first gate electrode, an additional dielectric structure disposed on the first additional capacitor electrode, the additional dielectric structure including a portion of the insulating interlayer, and a second additional capacitor electrode disposed on the additional dielectric structure, the second additional capacitor electrode including a portion of the data line.

14. The method of claim 11, wherein the first transistor, the second transistor and the capacitor are simultaneously formed.