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Semiconductor device and manufacturing method thereof

  • US 9,620,623 B2
  • Filed: 07/29/2014
  • Issued: 04/11/2017
  • Est. Priority Date: 10/19/2011
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a conductive film over an insulating surface;

    forming a gate electrode by etching the conductive film using a gas including halogen;

    removing a residue on the gate electrode after the step of forming the gate electrode;

    forming a gate insulating film over the gate electrode after the step of removing the residue on the gate electrode;

    forming an oxide semiconductor film over the gate insulating film; and

    forming a source electrode and a drain electrode over the oxide semiconductor film,wherein the oxide semiconductor film comprises indium, andwherein the step of removing the residue is performed by a plasma treatment.

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