×

Electronic device including a trench and a conductive structure therein

  • US 9,620,639 B2
  • Filed: 05/29/2015
  • Issued: 04/11/2017
  • Est. Priority Date: 02/24/2012
  • Status: Active Grant
First Claim
Patent Images

1. An electronic device comprising a transistor structure, comprising:

  • a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate, and wherein the first and second trenches are disposed in an active area of the electronic device;

    first conductive structures within each of the first and second trenches;

    a gate electrode within the first trench and electrically insulated from the first conductive structure;

    a first insulating member disposed between the gate electrode and the first conductive structure within the first trench;

    a second conductive structure within the second trench, wherein the second conductive structure is electrically connected to the first conductive structures and is electrically insulated from the gate electrode;

    a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench,other first trenches substantially identical to the first trench;

    other gate electrodes within the other first trenches;

    other second trenches having different widths as compared to each other; and

    other second conductive structures within the other second trenches,wherein a ratio of a first number of gate electrodes to a second number of second conductive structures is in a range of approximately 0.75;

    1 to approximately 1.5;

    1.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×