Electronic device including a trench and a conductive structure therein
First Claim
1. An electronic device comprising a transistor structure, comprising:
- a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate, and wherein the first and second trenches are disposed in an active area of the electronic device;
first conductive structures within each of the first and second trenches;
a gate electrode within the first trench and electrically insulated from the first conductive structure;
a first insulating member disposed between the gate electrode and the first conductive structure within the first trench;
a second conductive structure within the second trench, wherein the second conductive structure is electrically connected to the first conductive structures and is electrically insulated from the gate electrode;
a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench,other first trenches substantially identical to the first trench;
other gate electrodes within the other first trenches;
other second trenches having different widths as compared to each other; and
other second conductive structures within the other second trenches,wherein a ratio of a first number of gate electrodes to a second number of second conductive structures is in a range of approximately 0.75;
1 to approximately 1.5;
1.
4 Assignments
0 Petitions
Accused Products
Abstract
An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface. The electronic device can further include first conductive structures within each of a first trench and a second trench, a gate electrode within the first trench and electrically insulated from the first conductive structure, a first insulating member disposed between the gate electrode and the first conductive structure within the first trench, and a second conductive structure within the second trench. The second conductive structure can be electrically connected to the first conductive structures and is electrically insulated from the gate electrode. The electronic device can further include a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench. Processing sequences can be used that simplify formation of the features within the electronic device.
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Citations
17 Claims
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1. An electronic device comprising a transistor structure, comprising:
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a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate, and wherein the first and second trenches are disposed in an active area of the electronic device; first conductive structures within each of the first and second trenches; a gate electrode within the first trench and electrically insulated from the first conductive structure; a first insulating member disposed between the gate electrode and the first conductive structure within the first trench; a second conductive structure within the second trench, wherein the second conductive structure is electrically connected to the first conductive structures and is electrically insulated from the gate electrode; a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench, other first trenches substantially identical to the first trench; other gate electrodes within the other first trenches; other second trenches having different widths as compared to each other; and other second conductive structures within the other second trenches, wherein a ratio of a first number of gate electrodes to a second number of second conductive structures is in a range of approximately 0.75;
1 to approximately 1.5;
1. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An electronic device comprising a transistor structure, comprising:
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a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate; first conductive structures within each of the first and second trenches; a gate electrode within the first trench and electrically insulated from the first conductive structure; a first insulating member disposed between the gate electrode and the first conductive structure within the first trench; a second conductive structure within the second trench; a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench; and a source region adjacent to the first trench, wherein the source region is electrically connected to the second conductive structure. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. An electronic device comprising a transistor structure, comprising:
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a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate, wherein the first and second trenches are disposed in an active area of the electronic device; first conductive structures within each of the first and second trenches; a gate electrode within the first trench and electrically insulated from the first conductive structure; a first insulating member disposed between the gate electrode and the first conductive structure within the first trench; a source region disposed adjacent to the first trench; a second insulating member disposed within the second trench; a second conductive structure disposed in the second trench, wherein, within the second trench, the second insulating member is disposed between the second conductive structure and the first conductive structure, and wherein the first and second conductive structures that lie within the second trench are electrically connected to each other; a body contact region within the semiconductor layer adjacent to the first and second trenches; and a conductive plug that directly contacts the source region, the body contact region, and the second conductive structure. - View Dependent Claims (16, 17)
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Specification