Semiconductor device having a transparent window for passing radiation

• US 9,620,656 B2
• Filed: 03/05/2015
• Issued: 04/11/2017
• Est. Priority Date: 03/07/2014
• Status: Active Grant

• Current Assignee: Melexis Technologies NV (Sensinnovat BVBA)
• Original Assignee: Melexis Technologies NV (Sensinnovat BVBA)
• Inventors: Chen, Jian, Van Buggenhout, Carl
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US14/639,334
• Publication Number:
  US 20150255634A1
• Time in Patent Office: 768 Days
• Field of Search: 257 98, 257 99, 257100, 257433, 257434
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

Claims

1. A packaged optical semiconductor device having a transparent window, comprising:

a substrate comprising a transparent cap layer directly connected to the substrate, and an opto-electric element located in a cavity formed between the substrate and the transparent cap layer;

the cap layer being made of quartz glass, sapphire glass or silicon, and having at least one protrusion extending on top of a substantially flat upper surface, the protrusion being integrally formed with the cap layer;

an encapsulating layer made of an opaque material applied to at least the substantially flat portion of the cap layer and to a side surface of the at least one protrusion, a top surface of the protrusion being substantially flush with an outer surface of the encapsulating layer.

2. The packaged optical semiconductor device according to claim 1, wherein the opaque material is a molding compound.

3. The packaged optical semiconductor device according to claim 1, wherein the at least one protrusion has a first cross-section at a first distance from the substrate, and a second cross-section at a second distance from the substrate larger than the first distance, whereby the area of the first cross-section is larger than the area of the second cross-section.

4. The packaged optical semiconductor device according to claim 1, being a device selected from the group consisting of an IR-sensor and an IR transmitter.