Semiconductor light emitting device and method for manufacturing same

• US 9,620,669 B2
• Filed: 10/02/2014
• Issued: 04/11/2017
• Est. Priority Date: 06/03/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugizaki, Yoshiaki, Shibata, Hideki, Kojima, Akihiro, Ishikawa, Masayuki, Tamura, Hideo, Komatsu, Tetsuro
• Primary Examiner(s): STARK, JARRETT J
• Application Number:
  US14/505,216
• Publication Number:
  US 20150017750A1
• Time in Patent Office: 922 Days
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.

Claims

1. A method for manufacturing a semiconductor light emitting device, comprising:

forming a semiconductor layer on a substrate, the semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer;

forming a separating trench separating the semiconductor layer into a plurality of semiconductor layers on the substrate;

forming a first electrode at a region including the light emitting layer on the first surface on a side opposite to the substrate;

forming a second electrode on the first surface;

forming an insulating layer on first surface sides of the semiconductor layers and on side surfaces of the semiconductor layers, each of the side surfaces continued from the second surface, the insulating layer covering the first electrode, the second electrode, and the side surfaces of the semiconductor layers;

forming a first opening and a second opening in the insulating layer, the first opening reaching the first electrode, the second opening reaching the second electrode;

forming a first interconnect layer in the first opening of the insulating layer and on a surface of the insulating layer on a side opposite to the semiconductor layer;

forming a second interconnect layer in the second opening of the insulating layer and on the surface of the insulating layer on the side opposite to the semiconductor layer, a portion of the second interconnect layer overlapping on the light emitting layer via the insulating layer;

forming a first metal pillar on a surface of the first interconnect layer on a side opposite to the first electrode;

forming a second metal pillar on a surface of the second interconnect layer on a side opposite to the second electrode;

forming a resin layer between a side face of the first metal pillar and a side face of the second metal pillar;

removing the substrate after forming the resin layer;

dicing the insulating layer and the resin layer at a position of the separating trench to divide a light emitting chip into a plurality of light emitting chips, each of the light emitting chips including the semiconductor layer, the first electrode, the second electrode, the insulating layer, the first interconnect layer, the second interconnect layer, the first metal pillar, the second metal pillar, and the resin layer;

placing the light emitting chips on a support at a second pitch with the second surface facing the support, the second pitch being larger than a first pitch on the substrate;

forming a fluorescent material layer on a plurality of second surfaces of the semiconductor layers, and covering the side surfaces of the semiconductor layers via the insulating layer with a portion of the fluorescent material layer; and

dicing a portion of the fluorescent material layer between the light emitting chips.

2. The method of claim 1, wherein the fluorescent material layer has a transparent resin and a fluorescent material dispersed in the transparent resin.

3. The method of claim 1, wherein the fluorescent material layer covers the entire second surface.

4. The method of claim 1, wherein a dicing width of a trench formed by dicing the fluorescent material layer is smaller than the second pitch of the plurality of light emitting chips.

5. The method of claim 1, wherein the portion of the fluorescent material layer is diced without dicing the support on which the plurality of light emitting chips are placed.

6. The method of claim 1, wherein the placing of the light emitting chips on the support includes:

attaching the light emitting chips placed at the first pitch to a stretchable tape;

stretching the tape to widen a pitch between the light emitting chips from the first pitch to the second pitch; and

forming the fluorescent material layer on the second surfaces of the light emitting chips placed at the second pitch so as to be connected between the light emitting chips.

7. The method of claim 6, wherein the fluorescent material layer in a film form is attached to the light emitting chips placed at the second pitch.

8. The method of claim 7, wherein the forming of the fluorescent material layer includes:

attaching a first fluorescent material layer in a film form onto the second surfaces; and

forming a second fluorescent material layer on the first fluorescent material layer, the second fluorescent material layer having a fluorescence peak wavelength different from a fluorescence peak wavelength of the first fluorescent material layer.

9. The method of claim 8, further comprising:

forming a recessed portion in a portion of the first fluorescent material layer between the light emitting chips,

the second fluorescent material layer being formed on the first fluorescent material layer so as to be filled into the recessed portion.

10. The method of claim 1, wherein the fluorescent material layer is not formed between the first metal pillar and the second metal pillar.