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Diode having vertical structure

  • US 9,620,677 B2
  • Filed: 03/03/2015
  • Issued: 04/11/2017
  • Est. Priority Date: 10/26/2001
  • Status: Expired due to Term
First Claim
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1. A vertical light emitting device, comprising:

  • a first pad;

    a first metal layer on the first pad, the first metal layer including titanium and gold;

    a gallium-nitride based semiconductor structure on the first metal layer, the gallium-nitride based semiconductor structure including;

    a first type semiconductor layer on the first metal layer,an active layer on the first type semiconductor layer; and

    a second type semiconductor layer,wherein the active layer includes multiple quantum well layer having indium;

    a second metal layer on the second type semiconductor layer, the second metal layer including platinum; and

    a second pad on the second metal layer.

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