Diode having vertical structure

• US 9,620,677 B2
• Filed: 03/03/2015
• Issued: 04/11/2017
• Est. Priority Date: 10/26/2001
• Status: Expired due to Term

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): Tran, Minh-Loan
• Application Number:
  US14/636,933
• Publication Number:
  US 20150179886A1
• Time in Patent Office: 770 Days
• Field of Search: None
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/3013 AIIIBV compounds

Abstract

A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Claims

1. A vertical light emitting device, comprising:

a first pad;

a first metal layer on the first pad, the first metal layer including titanium and gold;

a gallium-nitride based semiconductor structure on the first metal layer, the gallium-nitride based semiconductor structure including;

a first type semiconductor layer on the first metal layer,

an active layer on the first type semiconductor layer; and

a second type semiconductor layer,

wherein the active layer includes multiple quantum well layer having indium;

a second metal layer on the second type semiconductor layer, the second metal layer including platinum; and

a second pad on the second metal layer.

2. The light emitting device according to claim 1, wherein the first type semiconductor layer is doped with silicon with a doping concentration of 10¹⁷ cm⁻

3 or greater.

3. The light emitting device according to claim 2, wherein the second type semiconductor layer is doped with magnesium with a doping concentration of 10¹⁷ cm⁻

3 or greater.

4. The light emitting device according to claim 3, further comprising an undoped gallium-nitride layer on the first metal layer.

5. The light emitting device according to claim 4, wherein the undoped gallium-nitride layer is a buffer layer.

6. The light emitting device according to claim 4, wherein a thickness of the undoped gallium-nitride layer is 30 μ

m to 40 μ

m.

7. The light emitting device according to claim 3, wherein the active layer includes 22% to 40% of indium composition.

8. The light emitting device according to claim 3, wherein the active layer comprises aluminum-indium-gallium-nitride.

9. The light emitting device according to claim 3, further comprising a transparent conductive layer on the second type semiconductor layer.

10. The light emitting device according to claim 9, wherein the transparent conductive layer comprises oxide such as indium-tin-oxide.

11. The light emitting device according to claim 1, wherein the second pad on the second metal layer has a thickness of 0.5 μ

m or higher.

12. The light emitting device according to claim 1, wherein the first type is n-type and the second type is p-type.

13. The light emitting device according to claim 1, wherein the first pad on which the first metal layer is located is at a bottom of the device.

14. The light emitting device according to claim 1, wherein a width of the first metal layer is greater than a width of the second pad.

15. The light emitting device according to claim 1, wherein the first metal layer is overlapped with the second pad in a first direction at a cross-sectional edge of the vertical light emitting device, the first direction being a thickness direction of the vertical light emitting device.

16. The light emitting device according to claim 1, further comprising a cladding layer between the active layer and the second type semiconductor layer.

17. The light emitting device according to claim 16, wherein the cladding layer comprises AIGaN.