Voltage level shifter

• US 9,621,134 B2
• Filed: 10/20/2015
• Issued: 04/11/2017
• Est. Priority Date: 04/17/2015
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Tian, Lei, Liang, Yongqin, Wu, Xiaowen
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): Chen, Patrick
• Application Number:
  US14/887,333
• Publication Number:
  US 20160308442A1
• Time in Patent Office: 539 Days
• Field of Search: 327333
• CPC Class Codes: H03K 3/356113 using additional transistors in the input circuit

Abstract

A level shifter in a primary voltage domain has a control module receiving an input signal from a secondary voltage domain for controlling operation of the level shifter. The control module includes a complementary pair of transistors and a first native transistor connected in a series current conduction path in the primary voltage domain. The complementary pair of transistors have gates connected to receive the input signal and the first native transistor has a gate connected to limit to a leakage current the current in the series current conduction path.

Claims

1. A level shifter for providing an output signal in a first voltage domain as a function of an input signal in a second voltage domain, the level shifter comprising:

a level shifter module in the first voltage domain for providing the output signal;

a control module for controlling operation of the level shifter module, the control module including a complementary pair of transistors and a first native transistor connected in a series current conduction path in the first voltage domain, wherein each of the transistors of the complementary pair are connected in the series current conduction path to a first intermediate node that is connected to control the level shifter module; and

a further transistor connected in the series current conduction path to a first complementary transistor of the complementary pair at a second intermediate node and to the first native transistor,

wherein the transistors of the complementary pair have control nodes connected to receive the input signal, and the first native transistor has a control node connected to limit to a leakage current of the current in the series current conduction path,

wherein the first complementary transistor and the further transistor are of a first type and the first native transistor is of an opposite type to the first type, and

wherein the control node of the first native transistor is connected to the second intermediate node and is reverse biased by a voltage drop in the series current conduction path across the further transistor.

2. The level shifter of claim 1, wherein the transistors of the complementary pair are connected in an inverter configuration to provide a control signal in the first voltage domain that is inverted relative to the input signal to control the level shifter module.

3. The level shifter of claim 1, wherein the first native transistor is more reverse biased when the further transistor is relatively non-conductive than when the further transistor is more conductive.

4. The level shifter of claim 1, wherein a further current conduction path is connected between the first intermediate node and a voltage supply of the second voltage domain for limiting leakage current between the first and second voltage domains.

5. The level shifter of claim 1, further comprising:

a second native transistor that has a current conduction path connected to the second intermediate node in parallel with a series combination of the first native transistor and the further transistor,

wherein the second native transistor provides leakage current to the second intermediate node if the leakage current of the first native transistor is insufficient during start-up of the second voltage domain.

6. The level shifter of claim 1, wherein the first voltage domain is supplied from a primary power supply and the second voltage domain is supplied from a secondary power supply.

7. The level shifter of claim 6, wherein the primary power supply is a battery.

8. The level shifter of claim 1, wherein:

the level shifter module comprises a flip-flop in the first voltage domain, the flip-flop having a first input connected to receive a first control signal from the control module, and

the control module includes duplicate elements receiving the first control signal for providing to a second input of the flip-flop a second control signal that is inverted relative to the first control signal.

9. A power supply apparatus, comprising:

first and second voltage domains; and

a level shifter for providing an output signal in the first voltage domain as a function of an input signal in the second voltage domain,

wherein the level shifter comprises;

a level shifter module in the first voltage domain for providing the output signal; and

a control module for controlling operation of the level shifter module;

wherein the control module includes a complementary pair of transistors and a first native transistor connected in a series current conduction path in the first voltage domain, wherein each of the transistors of the complementary pair are connected in the series current conduction path to a first intermediate node that is connected to control the level shifter module,

wherein the transistors of the complementary pair have control nodes connected to receive the input signal and the first native transistor has a control node connected to limit to a leakage current in the series current conduction path; and

a further transistor is connected in the series current conduction path to a first complementary transistor of the complementary pair at a second intermediate node and to the first native transistor, wherein the first complementary transistor and the further transistor are of a first type and the first native transistor is of the opposite type to the first type, and wherein the control node of the first native transistor is connected to the second intermediate node and is reverse biased by a voltage drop in the series current conduction path across the further transistor.

10. The power supply apparatus of claim 9, wherein the transistors of the complementary pair are connected in an inverter configuration to provide a control signal in the first voltage domain that is inverted relative to the input signal to control the level shifter module.

11. The power supply apparatus of claim 9, wherein the first native transistor is more reverse biased when the further transistor is relatively non-conductive than when the further transistor is more conductive.

12. The power supply apparatus of claim 9, wherein a further current conduction path is connected between the first intermediate node and a voltage supply of the second voltage domain limiting leakage current between the first and second voltage domains.

13. The power supply apparatus of claim 9, further comprising:

a second native transistor having a current conduction path connected to the second intermediate node in parallel with the series combination of the first native transistor and the further transistor,

wherein the second native transistor provides leakage current to the second intermediate node if the leakage current of the first native transistor is insufficient during start-up of the second voltage domain.

14. The power supply apparatus of claim 9, wherein the first voltage domain is supplied from a primary power supply and the second voltage domain is supplied from a secondary power supply.

15. The power supply apparatus of claim 14, wherein the primary power supply comprises a battery.

16. The power supply apparatus of claim 9, wherein the level shifter module comprises a flip-flop in the first voltage domain, the flip-flop having a first input connected to receive a first control signal from the control module, and

wherein the control module includes duplicate elements receiving the first control signal for providing to a second input of the flip-flop a second control signal, inverted relative to the first control signal.