Sapphire component with residual compressive stress
First Claim
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1. A method comprising:
- shaping a sapphire material into a sapphire component for an electronic device, the sapphire component having first and second major surfaces;
heating a selected region of one or both of the first and second major surfaces of the sapphire component to an annealing temperature that alters a chemical or physical property of the selected region, the annealing temperature being above 700°
C. and below 2030°
C.; and
quenching the selected region of the sapphire component below the annealing temperature by introducing a fluid to the selected region that cools the selected region at a higher rate as compared to a non-quenched cooling rate, such that residual compressive stress is generated in the selected region of the sapphire component;
wherein;
the selected region of the sapphire component having the generated residual compressive stress comprises a depth less than a thickness of the sapphire component; and
the sapphire component further comprises an untreated region positioned adjacent the selected region on the first major surface of the sapphire component.
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Abstract
A method comprises shaping an aluminum oxide ceramic material into a component for an electronic device. The component has first and second major surfaces. A selected region of one or both of the first and second major surfaces is heated to an annealing temperature. The selected region is then cooled below the annealing temperature, so that residual compressive stress is generated in the selected region.
42 Citations
27 Claims
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1. A method comprising:
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shaping a sapphire material into a sapphire component for an electronic device, the sapphire component having first and second major surfaces; heating a selected region of one or both of the first and second major surfaces of the sapphire component to an annealing temperature that alters a chemical or physical property of the selected region, the annealing temperature being above 700°
C. and below 2030°
C.; andquenching the selected region of the sapphire component below the annealing temperature by introducing a fluid to the selected region that cools the selected region at a higher rate as compared to a non-quenched cooling rate, such that residual compressive stress is generated in the selected region of the sapphire component;
wherein;the selected region of the sapphire component having the generated residual compressive stress comprises a depth less than a thickness of the sapphire component; and the sapphire component further comprises an untreated region positioned adjacent the selected region on the first major surface of the sapphire component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method comprising:
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shaping a sapphire material into a sapphire component for an electronic device, the sapphire component having first and second major surfaces; heating the sapphire material to an annealing temperature that is within a range of between 700°
C. to 2030°
C.; andforming a residual compressive stress in a selected region of the sapphire component by quenching the selected region of the sapphire component using a fluid that cools the selected region below the annealing temperature at an accelerated cooling rate that is greater than an unquenched cooling rate without the fluid, the selected region of the sapphire component having greater residual compressive stress than an untreated region of the sapphire component in which the residual compressive stress is not induced;
wherein;the selected region of the sapphire component comprises a depth less than a thickness of the sapphire component; and the untreated region of the sapphire component is positioned below the selected region, within the sapphire component. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A method comprising:
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heating a selected region of at least one surface of a sapphire component for an electronic device to an annealing temperature that is less than 2030°
C. and greater than 700°
C., the selected region exhibiting a material toughness distinct from an untreated region of the sapphire component based on the annealing temperature altering a chemical or physical property of the selected region;quenching the selected region of the sapphire component below the annealing temperature such that a differential cooling rate is generated between the selected region and the untreated region of the sapphire component that is not subject to the quenching; and creating a residual compressive stress in the selected region of the sapphire component, the generated residual compressive stress created in the selected region of the sapphire component comprises a depth less than a thickness of the sapphire component;
whereinthe selected region of the sapphire component is substantially surrounded by the untreated region of the sapphire component. - View Dependent Claims (25, 26, 27)
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Specification