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Continuous process incorporating atomic layer etching

  • US 9,627,221 B1
  • Filed: 12/28/2015
  • Issued: 04/18/2017
  • Est. Priority Date: 12/28/2015
  • Status: Active Grant
First Claim
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1. A method of continuous fabrication of a layered structure on a substrate having a patterned recess, comprising:

  • (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power;

    (ii) continuously from completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by plasma-enhanced atomic layer etching (PEALE) using a second RF power,wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii);

    a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and

    the second RF power is higher than the first RF power.

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