Continuous process incorporating atomic layer etching
First Claim
1. A method of continuous fabrication of a layered structure on a substrate having a patterned recess, comprising:
- (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power;
(ii) continuously from completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by plasma-enhanced atomic layer etching (PEALE) using a second RF power,wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii);
a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and
the second RF power is higher than the first RF power.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.
-
Citations
17 Claims
-
1. A method of continuous fabrication of a layered structure on a substrate having a patterned recess, comprising:
-
(i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power; (ii) continuously from completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by plasma-enhanced atomic layer etching (PEALE) using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii);
a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and
the second RF power is higher than the first RF power. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification