Semiconductor device and display device

• US 9,627,413 B2
• Filed: 12/11/2014
• Issued: 04/18/2017
• Est. Priority Date: 12/12/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Okazaki, Kenichi, Hamochi, Takashi, Shima, Yukinori, Yamazaki, Shunpei
• Primary Examiner(s): Oh, Jaehwan
• Application Number:
  US14/567,205
• Publication Number:
  US 20150171116A1
• Time in Patent Office: 859 Days
• CPC Class Codes: H01L 2029/42388 characterised by the shape of the insulating material
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

The semiconductor device includes a transistor including an oxide semiconductor film, a first gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the first gate electrode, a first insulating film over the oxide semiconductor film, a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film, a second insulating film over the first insulating film and the pair of electrodes, and a second gate electrode that is over the second insulating film and overlaps with the oxide semiconductor film. The first insulating film includes a region having a thickness of 1 nm or more and 50 nm or less, and the pair of electrodes includes a region in which a distance between the electrodes is 1 μm or more and 6 μm or less.

Claims

1. A semiconductor device comprising:

a transistor comprising;

a first gate electrode;

an oxide semiconductor film overlapping the first gate electrode;

a gate insulating film between the oxide semiconductor film and the first gate electrode;

a first insulating film over the oxide semiconductor film;

a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film;

a second insulating film over the first insulating film and the pair of electrodes; and

a second gate electrode that is over the second insulating film and overlaps the oxide semiconductor film,

wherein the first insulating film comprises a region where a nitrogen concentration measured by SIMS is lower than or equal to 6×

10²⁰ atoms/cm³,

wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm,

wherein a spin density of the second insulating film is lower than or equal to 3×

10¹⁷ spins/cm³ at g=2.001, and

wherein the pair of electrodes includes a region in which a distance between the pair of electrodes is greater than or equal to 1μ

m and less than or equal to 6μ

m.

2. The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises an In-M-Zn oxide where M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film includes a crystal part, and a c-axis of the crystal part is aligned parallel to a normal vector of a surface where the oxide semiconductor film is formed.

4. A display device comprising the semiconductor device according to claim 1.

5. An electronic device comprising the semiconductor device according to claim 1.

20. The semiconductor device according to claim 1, wherein the pair of electrode comprises copper.

23. The semiconductor device according to claim 1, wherein the first gate electrode comprises copper.

6. A semiconductor device comprising:

a transistor comprising;

a first gate electrode;

an oxide semiconductor film overlapping the first gate electrode;

a gate insulating film between the oxide semiconductor film and the first gate electrode;

a first insulating film over the oxide semiconductor film;

a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film;

a second insulating film over the first insulating film and the pair of electrodes; and

a second gate electrode that is over the second insulating film and overlaps the oxide semiconductor film,

wherein the first insulating film comprises a region where a nitrogen concentration measured by SIMS is lower than or equal to 6×

10²⁰ atoms/cm³,

wherein the first gate electrode and the second gate electrode are connected to each other in an opening in the gate insulating film, the first insulating film, and the second insulating film, and the oxide semiconductor film is surrounded by the first gate electrode and the second gate electrode with the gate insulating film between the oxide semiconductor film and the first gate electrode and with the first insulating film and the second insulating film between the oxide semiconductor film and the second gate electrode,

wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm,

wherein a spin density of the second insulating film is lower than or equal to 3×

10¹⁷ spins/cm³ at g=2.001, and

wherein the pair of electrodes includes a region in which a distance between the pair of electrodes is greater than or equal to 1 μ

m and less than or equal to 6 μ

m.

7. The semiconductor device according to claim 6, wherein the oxide semiconductor film comprises an In-M-Zn oxide where M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

8. The semiconductor device according to claim 6, wherein the oxide semiconductor film includes a crystal part, and a c-axis of the crystal part is aligned parallel to a normal vector of a surface where the oxide semiconductor film is formed.

9. A display device comprising the semiconductor device according to claim 6.

10. An electronic device comprising the semiconductor device according to claim 6.

21. The semiconductor device according to claim 6, wherein the pair of electrode comprises copper.

24. The semiconductor device according to claim 6, wherein the first gate electrode comprises copper.

11. A semiconductor device comprising:

a transistor comprising;

a first gate electrode;

a stacked-layer oxide film comprising an oxide semiconductor film and a metal oxide film, the stacked-layer oxide film overlapping the first gate electrode;

a gate insulating film between the stacked-layer oxide film and the first gate electrode;

a first insulating film over the stacked-layer oxide film;

a pair of electrodes that are over the first insulating film and electrically connected to the stacked-layer oxide film;

a second insulating film over the first insulating film and the pair of electrodes; and

a second gate electrode that is over the second insulating film and overlaps the stacked-layer oxide film,

wherein the first insulating film comprises a region where a nitrogen concentration measured by SIMS is lower than or equal to 6×

10²⁰ atoms/cm³,

wherein the first insulating film includes a region having a thickness greater than or equal to 1 nm and less than or equal to 50 nm,

wherein a spin density of the second insulating film is lower than or equal to 3×

10¹⁷ spins/cm³ at g=2.001, and

wherein the pair of electrodes includes a region in which a distance between the pair of electrodes is greater than or equal to 1 μ

m and less than or equal to 6 μ

m.

12. The semiconductor device according to claim 11,

wherein the first gate electrode and the second gate electrode are connected to each other in an opening in the gate insulating film, the first insulating film, and the second insulating film, and the stacked-layer oxide film is surrounded by the first gate electrode and the second gate electrode with the gate insulating film between the stacked-layer oxide film and the first gate electrode and with the first insulating film and the second insulating film between the stacked-layer oxide film and the second gate electrode.

13. The semiconductor device according to claim 11, wherein the oxide semiconductor film comprises an In-M-Zn oxide where M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

14. The semiconductor device according to claim 11, wherein the oxide semiconductor film includes a crystal part, and a c-axis of the crystal part is aligned parallel to a normal vector of a surface where the oxide semiconductor film is formed.

15. The semiconductor device according to claim 11, wherein the metal oxide film is an In-M-Zn oxide or an In-M oxide where M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf.

16. The semiconductor device according to claim 11, wherein the metal oxide film includes a crystal part, and a c-axis of the crystal part is aligned parallel to a normal vector of a surface where the metal oxide film is formed.

17. The semiconductor device according to claim 11, wherein an energy level of a bottom of a conduction band of the metal oxide film is closer to a vacuum level than that of the oxide semiconductor film is.

19. An electronic device comprising the semiconductor device according to claim 11.

22. The semiconductor device according to claim 11, wherein the pair of electrode comprises copper.

25. The semiconductor device according to claim 11, wherein the first gate electrode comprises copper.

18. A display device including the semiconductor device according to claim cm 11.