Active matrix organic light emitting diode panel and method for manufacturing the same

• US 9,627,447 B2
• Filed: 11/21/2013
• Issued: 04/18/2017
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Shanghai Tianma Micro-Electronics Company Limited (Tianma Microelectronics Company Limited)
• Original Assignee: Shanghai Tianma Micro-Electronics Company Limited (Tianma Microelectronics Company Limited)
• Inventors: Xiong, Zhiyong, Zhao, Bengang
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US14/086,613
• Publication Number:
  US 20140159004A1
• Time in Patent Office: 1,244 Days
• Field of Search: 257 40, 313504, 313505, 313506, 313586
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/352 the areas of the RGB subpixels being different

Abstract

The invention discloses an active matrix organic light emitting diode panel and a method for manufacturing the same. The active matrix organic light emitting diode panel includes a substrate, an organic film formed on the substrate, and a plurality of red, green and blue organic light emitting diodes formed on the organic film. A recess or protrusion is formed in the organic film in a region corresponding to the blue organic light emitting diode. The blue organic light emitting diode is formed on the recess or protrusion, and the surface area of the recess or protrusion is larger than the area of the surface where the red or green organic light emitting diodes contacts the organic film.

Claims

1. An active matrix organic light emitting diode panel, comprising:

a substrate;

a patterned layer comprising thin film transistors (TFTs) on the substrate, divided into red, green, and blue regions;

a passivation layer disposed on the patterned layer;

an organic film formed on the passivation layer;

a recess or protrusion formed in the organic film aligned only to the blue region;

a blue organic light emitting diode formed in the recess or on the protrusion in the organic film aligned only to the blue region; and

a red and a green organic light emitting diodes formed on the top surface of the organic film aligned to the red and green regions respectively, wherein the organic film surface over the red and green regions have no recess or protrusion, and wherein the contact area of the blue organic light emitting diode with the organic film is larger than the contact area of the red or green organic light emitting diode with the organic film.

2. The active matrix organic light emitting diode panel according to claim 1, wherein the contact area of red organic light emitting diode with the organic film is equal to the contact area of the green organic light emitting diode with the organic film.

3. The active matrix organic light emitting diode panel according to claim 1, wherein an opening area of the recess is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

4. The active matrix organic light emitting diode panel according to claim 2, wherein an opening area of the recess is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

5. The active matrix organic light emitting diode panel according to claim 1, wherein a bottom surface area of the protrusion is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

6. The active matrix organic light emitting diode panel according to claim 2, wherein a bottom surface area of the protrusion is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

7. The active matrix organic light emitting diode panel according to claim 1, wherein the recess is wedge-shaped, W-shaped or hemispherical.

8. The active matrix organic light emitting diode panel according to claim 1, wherein the protrusion is wedge-shaped, M-shaped or hemispherical.

9. The active matrix organic light emitting diode panel according to claim 3, wherein a depth of the recess is less than or equal to a thickness of the organic film.

10. A method for manufacturing an active matrix organic light emitting diode panel, comprising:

providing a substrate;

providing a patterned layer comprising thin film transistors (TFTs) on the substrate, divided into red, green, and blue regions;

providing a passivation layer disposed on the patterned layer;

forming an organic film on the passivation layer;

forming a recess or protrusion in the organic film aligned only to the blue region;

forming a blue organic light emitting diode in the recess or on the protrusion in the organic film aligned only to the blue region; and

forming a red and a green organic light emitting diodes on the top surface of the organic film aligned to the red and green regions respectively, wherein the organic film surface over the red and green regions have no recess or protrusion, and wherein the contact area of the blue organic light emitting diode with the organic film is larger than the contact area of the red or green organic light emitting diode with the organic film.

11. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein the contact area of the red organic light emitting diode with the organic film is equal to the contact area of the green organic light emitting diode with the organic film.

12. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein an opening area of the recess is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

13. The method for manufacturing the active matrix organic light emitting diode panel according to claim 11, wherein an opening area of the recess is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

14. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein a bottom surface area of the protrusion is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

15. The method for manufacturing the active matrix organic light emitting diode panel according to claim 11, wherein a bottom surface area of the protrusion is less than or equal to the contact area of the red organic light emitting diode or the green organic light emitting diode with the organic film.

16. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein a depth of the recess is less than or equal to a thickness of the organic film.

17. The method for manufacturing the active matrix organic light emitting diode panel according to claim 10, wherein, before forming the organic film on the substrate, the method further comprises:

forming a plurality of thin-film transistors on the substrate; and

forming a passivation layer on the thin-film transistor.