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LEDs with efficient electrode structures

  • US 9,627,589 B2
  • Filed: 04/29/2016
  • Issued: 04/18/2017
  • Est. Priority Date: 05/19/2006
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a first doped region disposed on a second doped region to form an active region therebetween for generating light;

    a cutout defined by a partial removal of material from the first doped region to expose a surface of the second doped region;

    a dielectric disposed only on the surface in a first region of the cutout; and

    an electrode comprising a first portion disposed on the dielectric and a second portion disposed on the surface in a second region of the cutout.

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