Touch panel structure
First Claim
1. A touch panel structure, comprising:
- a sapphire substrate having a crystal axis, a crystal structure and a transmittance, wherein the crystal axis comprises one selected from a group consisting of c-axis (0001), a-axis (1210), a-axis (1120), a-axis (2110), a-axis (1120), a-axis (21
10), a-axis (1210), m-axis (1010), m-axis (1100), m-axis (0 110), m-axis (1010), m-axis (1100), m-axis (0110), r-axis (1011), r-axis (1011), r-axis (0111), r-axis (011
1), r-axis (1101) and r-axis (1101), wherein the crystal structure is a single-crystal structure, and the transmittance is one of percentages larger than and equal to 80%; and
a sensing module having a first sensing layer directly disposed on the sapphire substrate, wherein;
the sensing module further includes an insulating layer;
the first sensing layer has a first surface and a second surface, wherein the first surface directly contacts the sapphire substrate, and the insulating layer is formed on the second surface;
the first sensing layer includes an x-axis sensing circuit net and a y-axis sensing circuit net, wherein the x-axis sensing circuit net and the y-axis sensing circuit net interlace with each other from a top view and are not electrically connected to each other;
the first sensing layer is an ITO transparent conductive film; and
the sensing module is formed on the sapphire substrate by a photolithography process.
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Abstract
A touch panel structure is provided. The touch panel structure includes a sapphire substrate having a crystal axis, a crystal structure and a transmittance, wherein the crystal axis includes one selected from a group consisting of c-axis (0001), a-axis (1
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Citations
8 Claims
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1. A touch panel structure, comprising:
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a sapphire substrate having a crystal axis, a crystal structure and a transmittance, wherein the crystal axis comprises one selected from a group consisting of c-axis (0001), a-axis (1 2 10), a-axis (112 0), a-axis (211 0), a-axis (11 20), a-axis (2 1
10), a-axis (1 21 0), m-axis (1 010), m-axis (1 100), m-axis (0 11 0), m-axis (101 0), m-axis (11 00), m-axis (01 10), r-axis (101 1), r-axis (1 011 ), r-axis (0111 ), r-axis (01 1
1), r-axis (11 01 ) and r-axis (1 101), wherein the crystal structure is a single-crystal structure, and the transmittance is one of percentages larger than and equal to 80%; anda sensing module having a first sensing layer directly disposed on the sapphire substrate, wherein; the sensing module further includes an insulating layer; the first sensing layer has a first surface and a second surface, wherein the first surface directly contacts the sapphire substrate, and the insulating layer is formed on the second surface; the first sensing layer includes an x-axis sensing circuit net and a y-axis sensing circuit net, wherein the x-axis sensing circuit net and the y-axis sensing circuit net interlace with each other from a top view and are not electrically connected to each other; the first sensing layer is an ITO transparent conductive film; and the sensing module is formed on the sapphire substrate by a photolithography process. - View Dependent Claims (2)
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3. A touch panel structure, comprising:
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a sapphire substrate having a crystal structure and a transmittance, wherein the crystal structure is a single-crystal structure, and the transmittance is one of percentages larger than and equal to 80%; and a sensing module comprising a first sensing layer directly disposed on the sapphire substrate, wherein the sapphire substrate further has a crystal axis including one selected from a group consisting of c-axis (0001), a-axis (1 2 10), a-axis (1 12 0), a-axis (211 0), a-axis (11 20), a-axis (2 1
10), a-axis (1 21 0), m-axis (1 010), m-axis (1 100), m-axis (011 0), m-axis (101 0), m-axis (11 00), m-axis (01 10), r-axis (1 01 1), r-axis (1 011 ), r-axis (0111 ), r-axis (011
1), r-axis (11 01 ) and r-axis (1 101);the sensing module further includes an insulating layer; the first sensing layer has a first surface and a second surface, wherein the first surface directly contacts the sapphire substrate, and the insulating layer is formed on the second surface; the first sensing layer includes an x-axis sensing circuit net and a y-axis sensing circuit net, wherein the x-axis sensing circuit net and the y-axis sensing circuit net interlace with each other from a top view and are not electrically connected to each other; the first sensing layer is an ITO transparent conductive film; and the sensing module is formed on the sapphire substrate by a photolithography process. - View Dependent Claims (4)
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5. A touch panel structure, comprising:
a sapphire substrate having a single-crystal structure; and a sensing module including a first sensing layer directly disposed on the sapphire substrate, the sapphire substrate further has a crystal axis including one selected from a group consisting of c-axis (0001), a-axis (1 2 10), a-axis (1 12 0), a-axis (211 0), a-axis (11 20), a-axis (2 1
10), a-axis (1 21 0), m-axis (1 010), m-axis (1 100), m-axis (0 11 0), m-axis (101 0), m-axis (11 00), m-axis (01 10), r-axis (1 01 1), r-axis (1 011 ), r-axis (0111 ), r-axis (01 1
1), r-axis (11 01 ) and r-axis (1 101);the sensing module further includes an insulating layer; the first sensing layer has a first surface and a second surface, wherein the first surface directly contacts the sapphire substrate, and the insulating layer is formed on the second surface; the first sensing layer includes an x-axis sensing circuit net and a y-axis sensing circuit net, wherein the x-axis sensing circuit net and the y-axis sensing circuit net interlace with each other from a top view and are not electrically connected to each other; the first sensing layer is an ITO transparent conductive film; the sensing module is formed on the sapphire substrate by a photolithography process; and the sapphire substrate further has a transmittance being one of percentages larger than and equal to 80%. - View Dependent Claims (6)
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7. A touch panel structure, comprising:
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a touch screen; and a sensing module having a bottom layer directly disposed on the touch screen, wherein the touch screen comprises a sapphire substrate, the sapphire substrate has a single-crystal structure; the sapphire substrate further has a crystal axis including one selected from a group consisting of c-axis (0001), a-axis (1 2 10), a-axis (1 12 0), a-axis (211 0), a-axis (11 20), a-axis (2 1
10), a-axis (1 21 0), m-axis (1 010), m-axis (1 100), m-axis (011 0), m-axis (101 0), m-axis (11 00), m-axis (01 10), r-axis (1 01 1), r-axis (1 011 ), r-axis (0111 ), r-axis (01 1
1), r-axis (11 01 ) and r-axis (1 101);the bottom layer includes a sensing layer and an insulating layer; the sensing layer has a first surface and a second surface, wherein the first surface directly contacts the sapphire substrate, and the insulating layer is formed on the second surface; the sensing layer includes an x-axis sensing circuit net and a y-axis sensing circuit net, wherein the x-axis sensing circuit net and the y-axis sensing circuit net interlace with each other from a top view and are not electrically connected to each other; the sensing layer is an ITO transparent conductive film; the sensing module is formed on the sapphire substrate by a photolithography process; and the sapphire substrate further has a transmittance being one of percentages larger than and equal to 80%. - View Dependent Claims (8)
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Specification