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Method for operating semiconductor device

  • US 9,633,710 B2
  • Filed: 01/15/2016
  • Issued: 04/25/2017
  • Est. Priority Date: 01/23/2015
  • Status: Active Grant
First Claim
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1. A method for operating a semiconductor device comprising a capacitor and a transistor,wherein the capacitor comprises a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode, andwherein the transistor comprises a gate electrode, a third electrode, and a fourth electrode, the third electrode being electrically connected to the first electrode,the method comprising steps of:

  • applying a first potential to the gate electrode and a second potential to the second electrode in a first period;

    applying a third potential to the gate electrode and a fourth potential to the second electrode in a second period, the second period being longer than or equal to 1 ns and shorter than or equal to 500 μ

    s; and

    applying a fifth potential to the gate electrode and a sixth potential to the second electrode in a third period,wherein the first period, the second period, and the third period are continuous in this order,wherein a difference between the first potential and the second potential is larger than a difference between the third potential and the fourth potential, andwherein a difference between the fifth potential and the sixth potential is larger than the difference between the third potential and the fourth potential.

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