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Semiconductor device comprising oxide semiconductor

  • US 9,634,031 B2
  • Filed: 06/17/2015
  • Issued: 04/25/2017
  • Est. Priority Date: 06/20/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor including;

    a gate electrode;

    a first insulating film;

    an oxide semiconductor film;

    a second insulating film; and

    a pair of electrodes,wherein the oxide semiconductor film is located between the first insulating film and the second insulating film,wherein the oxide semiconductor film is in contact with the pair of electrodes,wherein the first insulating film is located between the gate electrode and the oxide semiconductor film,wherein silicon and oxygen are contained in at least one of the first insulating film and the second insulating film, andwherein the at least one of the first insulating film and the second insulating film has an etching rate of higher than 10 nm/min when etching is performed using a hydrofluoric acid.

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