Methods of forming image sensor integrated circuit packages

• US 9,634,059 B2
• Filed: 12/30/2014
• Issued: 04/25/2017
• Est. Priority Date: 12/30/2014
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Chiu, Jui Yi
• Primary Examiner(s): Patel, Reema
• Assistant Examiner(s): PATERSON, BRIGITTE A
• Application Number:
  US14/586,225
• Publication Number:
  US 20160190204A1
• Time in Patent Office: 847 Days
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/06051 Bonding areas having different shapes
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 24/04 Structure, shape, material or disposition of the bonding areas prior to the connecting process
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

Claims

1. A method of forming image sensor packages comprising:

attaching a plurality of dam structures to a transparent substrate;

forming a plurality of conductive vias in an image sensor wafer having first and second image sensor dies;

attaching the image sensor wafer to the plurality of dam structures;

after attaching the image sensor wafer to the plurality of dam structures, separating the image sensor wafer into the first and second image sensor dies;

attaching the first and second image sensor dies to an additional substrate, wherein attaching the first and second image sensor dies to the additional substrate comprises contacting first and second portions of the transparent substrate to the additional substrate, wherein the first image sensor die has first and second opposing surfaces, and wherein the second surface is interposed between the transparent substrate and the first surface;

forming a redistribution layer contacting a conductive via of the plurality of conductive vias, wherein the redistribution layer is formed on the first surface of the first image sensor die; and

after attaching the first and second image sensor dies to the additional substrate, performing a molding process by forming mold material in direct contact with the additional substrate in between the first and second image sensor dies, wherein performing the molding process comprises forming mold material in direct contact with the first surface of the first image sensor die, and wherein performing the molding process comprises forming mold material in direct contact with the redistribution layer.

2. The method defined in claim 1, wherein attaching the image sensor wafer to the plurality of dam structures comprises attaching the first image sensor die to first and second dam structures of the plurality of dam structures and attaching the second image sensor die to third and fourth dam structures of the plurality of dam structures.

3. The method defined in claim 2, wherein the first image sensor die is attached to the first portion of the transparent substrate by the first and second dam structures, wherein the second image sensor die is attached to the second portion of the transparent substrate by the third and fourth dam structures, and wherein attaching the first and second image sensor dies to the additional substrate comprises attaching the first and second portions of the transparent substrate to the additional substrate.

4. The method defined in claim 1, further comprising:

after performing the molding process, removing the additional substrate.

5. The method defined in claim 4, further comprising:

after removing the additional substrate, separating the first and second image sensor dies to form first and second image sensor packages.

6. The method defined in claim 5, wherein separating the first and second image sensor dies to form first and second image sensor packages comprises cutting the mold material that is formed between the first and second image sensor dies.

7. The method defined in claim 1, wherein attaching the plurality of dam structures to the transparent substrate comprises attaching the plurality of dam structures to a glass substrate.

8. The method defined in claim 1, wherein attaching the plurality of dam structures to the transparent substrate comprises attaching the plurality of dam structures to a notched glass substrate.

9. The method defined in claim 8, wherein separating the image sensor wafer into first and second image sensor dies comprises cutting the notched glass substrate at a notch in the notched glass substrate.

10. The method defined in claim 1, wherein the first portion of the transparent substrate is attached to the first image sensor die though a first portion of the plurality of dam structures and wherein the second portion of the transparent substrate is attached to the second image sensor die through a second portion of the plurality of dam structures.

11. The method defined in claim 1, wherein the redistribution layer has a surface that is parallel to the first surface of the first image sensor die, and wherein forming mold material in direct contact with the redistribution layer comprises forming mold material in direct contact with the surface of the redistribution layer.

12. The method defined in claim 11, further comprising:

forming a mold via over the redistribution layer by removing at least a portion of the mold material that is in direct contact with the redistribution layer; and

forming solder in the mold via on the redistribution layer, wherein the solder directly contacts the redistribution layer.

13. The method defined in claim 12, wherein forming the mold via over the redistribution layer comprises laser drilling the at least portion of the mold material that is in direct contact with the redistribution layer.

14. The method defined in claim 1, wherein the first and second portions of the transparent substrate directly contact the additional substrate without any intervening dam structures.

15. A method of forming image sensor packages comprising:

attaching a plurality of dam structures to a transparent substrate;

forming a plurality of conductive vias in an image sensor wafer having first and second image sensor dies;

attaching the image sensor wafer to the plurality of dam structures;

after attaching the image sensor wafer to the plurality of dam structures, separating the image sensor wafer into the first and second image sensor dies;

attaching the first and second image sensor dies to an additional substrate, wherein attaching the first and second image sensor dies to the additional substrate comprises contacting first and second portions of the transparent substrate to the additional substrate, and wherein the first and second portions of the transparent substrate directly contact the additional substrate without any intervening dam structures;

after attaching the first and second image sensor dies to the additional substrate, performing a molding process by forming mold material in direct contact with the additional substrate in between the first and second image sensor dies and in direct contact with the transparent substrate;

after performing the molding process, removing the additional substrate; and

after removing the additional substrate, separating the first and second image sensor dies to form first and second image sensor packages, wherein separating the first and second image sensor dies to form first and second image sensor packages comprises cutting the mold material that is formed between the first and second image sensor dies.

16. The method defined in claim 15, wherein the mold material directly contacts the plurality of dam structures.

17. The method defined in claim 15, wherein separating the image sensor wafer into the first and second image sensor dies comprises completely separating the transparent substrate into the first and second portions of the transparent substrate.

18. The method defined in claim 17, wherein the first portion of the transparent substrate is attached to the first image sensor die though a first portion of the plurality of dam structures and wherein the second portion of the transparent substrate is attached to the second image sensor die through a second portion of the plurality of dam structures.

19. The method defined in claim 15, wherein the first image sensor die has first and second opposing surfaces, wherein the second surface is interposed between the transparent substrate and the first surface, the method further comprising:

before performing the molding process, forming a redistribution layer contacting a conductive via of the plurality of conductive vias, wherein the redistribution layer is formed on the first surface of the first image sensor die, wherein performing the molding process comprises forming mold material in direct contact with the first surface of the first image sensor die, and wherein performing the molding process comprises forming mold material in direct contact with the redistribution layer.