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Semiconductor device and method for manufacturing semiconductor device

  • US 9,634,082 B2
  • Filed: 02/29/2016
  • Issued: 04/25/2017
  • Est. Priority Date: 11/30/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating film;

    a second insulating film overlapping the first insulating film;

    a stack of semiconductor films interposed between the first insulating film and the second insulating film, the stack of semiconductor films comprising;

    a first oxide semiconductor film; and

    a second oxide semiconductor film on and in contact with the first oxide semiconductor film; and

    a gate electrode,wherein the gate electrode and the stack of semiconductor films overlap, andwherein a concentration in nitrogen of the first oxide semiconductor film is higher than a concentration in nitrogen of the second oxide semiconductor film.

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