Doped metal germanide and methods for making the same

• US 9,634,106 B2
• Filed: 07/31/2015
• Issued: 04/25/2017
• Est. Priority Date: 12/19/2008
• Status: Active Grant

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: Pore, Viljami J., Haukka, Suvi P., Blomberg, Tom E., Tois, Eva E.
• Primary Examiner(s): Ahmadi, Mohsen
• Application Number:
  US14/815,633
• Publication Number:
  US 20160035852A1
• Time in Patent Office: 634 Days
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/406 of iron group metals
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/3215 Doping the layers
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/4933 with a silicide layer contacting the silicon layer, e.g. Polycide gate with a barrier layer between the silicide and silicon layers H01L29/4941
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

Claims

1. A method for forming a doped metal germanide, comprising:

providing a substrate having at least one exposed germanium region;

depositing a metal oxide film comprising a first metal over the exposed germanium region;

depositing a dopant film comprising a second metal over the exposed germanium region and

heating the substrate to form the doped metal germanide film over the exposed germanium region using first metal from the metal oxide film, second metal from the dopant film and germanium from the exposed germanium region;

wherein depositing the primary metal oxide comprises conducting a plurality of primary metal oxide atomic layer deposition cycles, wherein each of the plurality of primary metal oxide atomic layer deposition cycles comprises alternately and sequentially contacting the substrate with a vapor phase primary metal source and a vapor phase metal oxide deposition cycle oxygen source.

2. The method of claim 1, wherein heating comprises reducing the metal oxide film to metal.

3. The method of claim 2, wherein the first metal reacts with germanium from the at least one exposed germanium region.

4. The method of claim 1, wherein the metal oxide film comprises an oxide of a metal selected from the group consisting of:

Ni, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Co, Cu, Fe, Ru, Ir, Rh, Pd and Pt.

5. The method of claim 4, wherein the metal oxide comprises nickel oxide.

6. The method of claim 5, wherein the doped metal germanide is a doped nickel germanide.

7. The method of claim 1, wherein the exposed germanium region comprises epitaxial germanium.

8. A method for forming a doped metal germanide film, comprising:

providing a substrate having at least one exposed germanium region;

depositing a primary metal oxide and a dopant metal oxide over the exposed germanium region; and

forming the doped metal germanide film over the exposed germanium region using a primary metal from the metal oxide and a dopant metal from the dopant oxide wherein forming the doped metal germanide film comprises reducing the primary metal oxide to form the primary metal and reducing the dopant metal oxide to form the dopant metal,

wherein depositing the primary metal oxide comprises conducting a plurality of primary metal oxide atomic layer deposition cycles, wherein each of the plurality of primary metal oxide atomic layer deposition cycles comprises alternately and sequentially contacting the substrate with a vapor phase primary metal source and a vapor phase primary metal oxide deposition cycle oxygen source.

9. The method of claim 8, wherein depositing the dopant metal oxide comprises conducting a plurality of dopant metal oxide atomic layer deposition cycles, wherein each of the plurality of dopant metal oxide atomic layer deposition cycles comprises alternately and sequentially contacting the substrate with a vapor phase dopant metal source and a vapor phase dopant metal oxidant.

10. The method of claim 9, wherein depositing the dopant metal oxide is prior to depositing the primary metal oxide.

11. The method of claim 9, wherein depositing the dopant metal oxide is subsequent to depositing the primary metal oxide.

12. The method of claim 8, wherein forming the doped metal germanide film further comprises reacting the primary metal and the dopant metal with germanium from the at least one exposed germanium region.

13. The method of claim 12, wherein each of reducing the primary metal oxide, reducing the dopant metal oxide, and reacting the primary metal and the dopant metal with the germanium comprises heating.

14. The method of claim 13, wherein heating for reducing the primary metal oxide, heating for reducing the dopant metal oxide, and heating for reacting the primary metal and the dopant metal with the germanium are performed simultaneously.

15. The method of claim 8, wherein the dopant metal oxide comprises platinum oxide.

16. The method of claim 8, wherein the primary metal oxide comprises nickel oxide.

17. The method of claim 8, wherein the doped metal germanide film comprises a doped NiGe film.

18. The method of claim 8, wherein the doped metal germanide film is a platinum doped nickel NiGe.