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Semiconductor device, display device, input/output device, and electronic device

  • US 9,634,150 B2
  • Filed: 03/05/2015
  • Issued: 04/25/2017
  • Est. Priority Date: 03/07/2014
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a transistor,wherein the transistor comprises an oxide semiconductor film, a gate insulating film, and a gate electrode,wherein the oxide semiconductor film comprises a first region, a second region and a third region,wherein the first region is between the second region and the third region,wherein each of the second region and the third region contains an impurity element,wherein the gate insulating film is between the oxide semiconductor film and the gate electrode,wherein the gate insulating film has a side region that is more on the inside than at least part of a side of the gate electrode, andwherein the gate electrode has regions overlapping with the second region and the third region in the oxide semiconductor film.

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