Reduced light degradation due to low power deposition of buffer layer
First Claim
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1. A method for forming a photovoltaic device, comprising:
- forming a buffer layer between a transparent electrode and a p-type layer, the buffer layer including an amorphous form of germanium having a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation, wherein deposition power for forming the buffer layer is adjusted to adjust said work function.
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Abstract
Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.
59 Citations
20 Claims
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1. A method for forming a photovoltaic device, comprising:
forming a buffer layer between a transparent electrode and a p-type layer, the buffer layer including an amorphous form of germanium having a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation, wherein deposition power for forming the buffer layer is adjusted to adjust said work function. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for forming a photovoltaic device, comprising:
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forming a transparent electrode on a transparent substrate; depositing a buffer layer on the transparent electrode, the buffer layer being deposited at a deposition power to provide an amorphous germanium layer with a work function that falls substantially in a middle of a barrier formed between adjacent layers to the buffer layer to provide a greater resistance to light induced degradation, wherein the deposition power for forming the buffer layer is adjusted to adjust said work function; depositing a p-type layer on the buffer layer; forming an intrinsic layer on the p-type layer; and forming an n-type layer on the intrinsic layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 20)
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18. A method for forming a photovoltaic device, comprising:
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forming a transparent conductive oxide on a transparent substrate; depositing a buffer layer including germanium on the transparent conductive oxide, the buffer layer being deposited at a deposition power of less than about 0.05 Watts per square centimeter to adjust a work function of the buffer layer, wherein the deposition power is a sole deposition parameter being adjusted to adjust said work function; and depositing a p-type amorphous silicon carbide layer on the buffer layer such that the work function of the buffer layer falls substantially in a middle of a barrier between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. - View Dependent Claims (19)
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Specification