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Wire bond free wafer level LED

  • US 9,634,191 B2
  • Filed: 11/14/2007
  • Issued: 04/25/2017
  • Est. Priority Date: 11/14/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an n-type epitaxial semiconductor layer comprising a first surface and a second surface opposite the first surface;

    a p-type epitaxial semiconductor layer comprising a third surface and a fourth surface opposite the third surface;

    an active region between the second surface and the fourth surface;

    a wavelength conversion layer adjacent to at least a portion of the first surface of said n-type semiconductor layer, wherein the first surface is opposite the third surface of the p-type semiconductor layer;

    a p-electrode comprising a lead that is accessible on the third surface, the third surface being opposite of a primary emission surface of said semiconductor device, said p-electrode electrically connected to said p-type layer;

    an n-electrode comprising a lead that is accessible on the second surface, the second surface being opposite of said primary emission surface, said n-electrode electrically connected to said n-type layer; and

    at least one spacer element, coupled to the n-electrode and the p-electrode, such that the at least one spacer element electrically isolates the n-electrode from the p-electrode, in which the n-electrode and the p-electrode extend laterally over the at least one spacer element,wherein said first surface of said n-type epitaxial semiconductor layer is modified to enhance emission from said semiconductor device.

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