Wire bond free wafer level LED
First Claim
1. A semiconductor device comprising:
- an n-type epitaxial semiconductor layer comprising a first surface and a second surface opposite the first surface;
a p-type epitaxial semiconductor layer comprising a third surface and a fourth surface opposite the third surface;
an active region between the second surface and the fourth surface;
a wavelength conversion layer adjacent to at least a portion of the first surface of said n-type semiconductor layer, wherein the first surface is opposite the third surface of the p-type semiconductor layer;
a p-electrode comprising a lead that is accessible on the third surface, the third surface being opposite of a primary emission surface of said semiconductor device, said p-electrode electrically connected to said p-type layer;
an n-electrode comprising a lead that is accessible on the second surface, the second surface being opposite of said primary emission surface, said n-electrode electrically connected to said n-type layer; and
at least one spacer element, coupled to the n-electrode and the p-electrode, such that the at least one spacer element electrically isolates the n-electrode from the p-electrode, in which the n-electrode and the p-electrode extend laterally over the at least one spacer element,wherein said first surface of said n-type epitaxial semiconductor layer is modified to enhance emission from said semiconductor device.
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Accused Products
Abstract
A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.
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Citations
30 Claims
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1. A semiconductor device comprising:
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an n-type epitaxial semiconductor layer comprising a first surface and a second surface opposite the first surface; a p-type epitaxial semiconductor layer comprising a third surface and a fourth surface opposite the third surface; an active region between the second surface and the fourth surface; a wavelength conversion layer adjacent to at least a portion of the first surface of said n-type semiconductor layer, wherein the first surface is opposite the third surface of the p-type semiconductor layer; a p-electrode comprising a lead that is accessible on the third surface, the third surface being opposite of a primary emission surface of said semiconductor device, said p-electrode electrically connected to said p-type layer; an n-electrode comprising a lead that is accessible on the second surface, the second surface being opposite of said primary emission surface, said n-electrode electrically connected to said n-type layer; and at least one spacer element, coupled to the n-electrode and the p-electrode, such that the at least one spacer element electrically isolates the n-electrode from the p-electrode, in which the n-electrode and the p-electrode extend laterally over the at least one spacer element, wherein said first surface of said n-type epitaxial semiconductor layer is modified to enhance emission from said semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor chip device, comprising:
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an n-type semiconductor layer comprising a primary emission surface; a p-type semiconductor layer; an active region between said n- and p-type layers; an n-electrode integral to said semiconductor chip device and comprising a lead that is accessible on a surface opposite said primary emission surface, said n-electrode electrically coupled to said n-type semiconductor layer; a p-electrode integral to said semiconductor chip device and comprising a lead that is accessible on a surface opposite said primary emission surface, said p-electrode electrically coupled to said p-type semiconductor layer; at least one spacer element, coupled to the n-electrode and the p-electrode, such that the at least one spacer element electrically isolates the n-electrode from the p-electrode and further electrically isolates the n-pad and the p-pad from the active region, in which the n-electrode and the p-electrode extend laterally over the at least one spacer element; and a phosphor layer coupled to the primary emission surface, wherein said primary emission surface of said n-type semiconductor layer is modified. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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26. A semiconductor Group-III nitride device, comprising:
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a flip-chip light emitting diode (LED) structure comprising an active region between a first surface of an n-type layer and a p-type layer; an n-pad electrically coupled to the first surface of said n-type layer; a wavelength conversion layer, coupled to at least a second surface of the n-type layer; a p-pad electrically coupled to said p-type layer opposite an emission surface of the wavelength conversion layer, the emission surface of the wavelength conversion layer being opposite the second surface of the n-type layer; at least one spacer element, coupled to at least the p-pad, in which the at least one spacer element electrically isolates the n-pad from the p-pad and further electrically isolates the n-pad and the p-pad from the active region; and an electrode layer, coupled to the p-pad and the at least one spacer element, the electrode layer patterned into at least one n-electrode and at least one p-electrode, in which patterning the electrode layer defines the at least one n-electrode and the at least one p-electrode and the defined at least one n-electrode and the defined at least one p-electrode are electrically isolated by the at least one spacer element; wherein said at least one n-electrode and said at least one p-electrode are exposed on a side of said semiconductor device opposite said n-type layer such that said semiconductor device is mountable to a surface, and wherein the second surface of said n-type layer is modified to enhance light emission from the emission surface of the semiconductor device.
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27. A semiconductor device, comprising:
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a light emitter structure comprising; an n-type layer; an active region coupled to a first surface of the n-type region; a p-type layer coupled to the active region opposite the n-type layer, a wavelength conversion layer coupled to a second surface of the n-type layer, wherein the second surface of said n-type layer is opposite said active layer and is modified to enhance light emission through the second surface of the n-type layer into the wavelength conversion layer; an n-electrode electrically coupled to said n-type layer; a p-electrode electrically coupled to said p-type layer; and at least one spacer element, coupled to the n-electrode and the p-electrode, such that the at least one spacer element electrically isolates the n-electrode from the p-electrode and the n-electrode and the p-electrode extend laterally over the at least one spacer element.
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28. A semiconductor device, comprising:
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a flip-chip light emitting diode (LED) structure comprising an active region between an n-type layer and a p-type layer; an n-electrode electrically coupled to said n-type layer; a p-electrode electrically coupled to said p-type layer; at least one spacer element, coupled to the n-electrode and the p-electrode such that the n-electrode and the p-electrode extend laterally over at least a portion of the at least one spacer element; a wavelength conversion layer on said n-type layer and said p-type layer; wherein said n-electrode and said p-electrode are exposed on a side of said semiconductor device opposite said n-type layer such that said semiconductor device is mountable to a surface wherein said n-electrode and said p-electrode are coplanar; and wherein said n-type layer comprises a modified surface, said modified surface coupled to said wavelength conversion layer. - View Dependent Claims (29, 30)
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Specification