Light emitting diode and method of manufacturing the same
First Claim
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1. A light-emitting diode, comprising:
- a substrate;
a first semiconductor layer disposed on the substrate;
an active layer disposed on the first semiconductor layer;
a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer;
a reflective metal layer disposed on the second semiconductor layer;
a stress relief layer disposed directly on the reflective metal layer;
a conductive barrier layer disposed on the stress relief layer such that the conductive barrier layer directly contacts the second semiconductor layer and covers a side surface of the reflective metal layer and the stress relief layer;
a lower insulation layer disposed on the conductive barrier layer, and comprising a first opening that exposes a top portion of the conductive barrier layer and a second opening that exposes a portion of the first semiconductor layer; and
an upper insulation layer disposed on the lower insulation layer, and comprising a first opening that is wider than the first opening of the lower insulation layer and that exposes the top portion of the conductive barrier layer exposed by the first opening of the lower insulation layer,wherein the stress relief layer is disposed between the reflective metal layer and the conductive barrier layer, and is configured to absorb stress caused by differences in the coefficient of thermal expansion of the reflective metal layer and the conductive barrier layer.
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Abstract
A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.
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Citations
20 Claims
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1. A light-emitting diode, comprising:
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a substrate; a first semiconductor layer disposed on the substrate; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer; a reflective metal layer disposed on the second semiconductor layer; a stress relief layer disposed directly on the reflective metal layer; a conductive barrier layer disposed on the stress relief layer such that the conductive barrier layer directly contacts the second semiconductor layer and covers a side surface of the reflective metal layer and the stress relief layer; a lower insulation layer disposed on the conductive barrier layer, and comprising a first opening that exposes a top portion of the conductive barrier layer and a second opening that exposes a portion of the first semiconductor layer; and an upper insulation layer disposed on the lower insulation layer, and comprising a first opening that is wider than the first opening of the lower insulation layer and that exposes the top portion of the conductive barrier layer exposed by the first opening of the lower insulation layer, wherein the stress relief layer is disposed between the reflective metal layer and the conductive barrier layer, and is configured to absorb stress caused by differences in the coefficient of thermal expansion of the reflective metal layer and the conductive barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating a light emitting diode, the method comprising:
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sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate; forming a mesa area by etching the second semiconductor layer and the active layer such that a surface of the first semiconductor layer is exposed through the mesa area; and forming a photoresist pattern on the mesa area; forming a reflective metal layer on the second semiconductor layer through a space opened by the photoresist pattern such that the reflective metal layer is configured to reflect light emitted from the active layer; forming a stress relief layer directly on the reflective metal layer; forming a conductive barrier layer to directly contact the second semiconductor layer; forming a lower insulation layer on the conductive barrier layer and the first semiconductor layer such that the lower insulation layer comprises a first opening exposing a top portion of the conductive barrier layer and a second opening exposing the first semiconductor layer; forming an upper insulation layer disposed on the lower insulation layer such that the upper insulation comprises a first opening that is wider than the first opening of the lower insulation layer and that exposes the top portion of the conductive barrier layer exposed by the first opening of the lower insulation layer; and removing the photoresist pattern. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification