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Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

  • US 9,634,237 B2
  • Filed: 12/23/2014
  • Issued: 04/25/2017
  • Est. Priority Date: 12/23/2014
  • Status: Active Grant
First Claim
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1. A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ), the material stack comprising:

  • an SAF coupling layer;

    a coupling enhancement layer comprising a single layer directly on the SAF coupling layer;

    an amorphous spacer layer directly on the coupling enhancement layer, in which the amorphous spacer layer comprises an alloy or multilayer comprising tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum; and

    no repetitions of a perpendicular magnetic anisotropy (PMA) multilayer within an anti-parallel pinned layer directly on the SAF coupling layer.

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