Magnetic random access memory with perpendicular interfacial anisotropy

• US 9,634,244 B2
• Filed: 03/24/2016
• Issued: 04/25/2017
• Est. Priority Date: 12/10/2010
• Status: Active Grant

• Current Assignee: Avalanche Technology Incorporated
• Original Assignee: Avalanche Technology Incorporated
• Inventors: Gan, Huadong, Huai, Yiming, Wang, Zihui, Zhou, Yuchen
• Primary Examiner(s): Fan, Michele
• Application Number:
  US15/080,208
• Publication Number:
  US 20160211443A1
• Time in Patent Office: 397 Days
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H01L 29/66984 Devices using spin polarized carriers
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

The present invention is directed to an MRAM element comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic free layer structure has a variable magnetization direction substantially perpendicular to the layer plane thereof. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a multilayer structure comprising a first magnetic reference sublayer formed adjacent to the first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from the first magnetic reference sublayer by an intermediate metallic layer.

Claims

1. A magnetic random access memory device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, wherein said magnetic free layer structure has a variable magnetization direction substantially perpendicular to a layer plane thereof, said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof, said second magnetic reference layer having a multilayer structure comprising a first magnetic reference sublayer formed adjacent to said first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from said first magnetic reference sublayer by an intermediate metallic layer, said first and second magnetic reference sublayers having said first fixed magnetization direction.

2. The MRAM device according to claim 1, wherein said first magnetic reference sublayer is Co, CoFe, or CoFeB, said second magnetic reference sublayer is Co or CoFe, said intermediate metallic layer is Pd, Pt, or Ni.

3. The MRAM device according to claim 2, wherein each of said first and second magnetic reference sublayers has a thickness in a range of about 0.2 nm to about 0.8 nm, said intermediate metallic layer has a thickness in a range of about 0.2 nm to about 1.2 nm.

4. The MRAM device according to claim 1, wherein said MTJ structure further comprises:

an anti-ferromagnetic coupling layer formed immediately adjacent to said second magnetic reference layer; and

a magnetic fixed layer formed immediately adjacent to said anti-ferromagnetic coupling layer and anti-ferromagnetically coupled to said second magnetic reference layer, said magnetic fixed layer having a second fixed magnetization direction that is perpendicular to a layer plane thereof and is substantially opposite to said first fixed magnetization direction.

5. The MRAM device according to claim 4, wherein said magnetic fixed layer has a multilayer structure formed by interleaving two different types of materials with at least one of said two different types being magnetic.

6. The MRAM device according to claim 5, wherein one of said two different types of materials of said magnetic fixed layer is cobalt and the other one of said two different types of materials is palladium, platinum, or nickel.

7. The MRAM device according to claim 4, wherein said magnetic free layer structure is formed of a single layer of magnetic material comprising cobalt, iron, and boron.

8. The MRAM device according to claim 1, wherein said magnetic free layer structure includes a first magnetic free layer formed adjacent to said insulating tunnel junction layer and a second magnetic free layer separated from said first magnetic free layer by a second non-magnetic perpendicular enhancement layer, said first and second magnetic free layers having respectively first and second variable magnetization directions that are substantially perpendicular to layer planes thereof and are oriented in a same direction.

9. The MRAIVI device according to claim 8, wherein each of said first and second non-magnetic perpendicular enhancement layers is made of tantalum or tantalum nitride and has a thickness in a range of about 0.2 nm to about 0.5 nm.

10. The MRAM device according to claim 8, wherein said first magnetic reference layer is formed of a single layer of magnetic material comprising cobalt, iron, and boron.

11. A magnetic random access memory device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, wherein said magnetic free layer structure has a variable magnetization direction substantially perpendicular to a layer plane thereof, said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof, said second magnetic reference layer having a multilayer structure comprising a first magnetic reference sublayer formed adjacent to said first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from said first magnetic reference sublayer by an intermediate metallic layer, said first non-magnetic perpendicular enhancement layer comprises a tantalum layer formed adjacent to said first magnetic reference layer and a ruthenium layer formed adjacent to said second magnetic reference layer.