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Chip level sensor with multiple degrees of freedom

  • US 9,638,524 B2
  • Filed: 11/30/2012
  • Issued: 05/02/2017
  • Est. Priority Date: 11/30/2012
  • Status: Active Grant
First Claim
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1. A sensing assembly device comprising:

  • a substrate;

    a chamber above the substrate;

    a first piezoelectric gyroscope sensor positioned within the chamber; and

    a first accelerometer positioned within the chamber, wherein the chamber is pressurized to a pressure sufficient to provide damping for the first accelerometer;

    the first piezoelectric gyroscope comprises;

    a first and second support beam, each of the first and second support beams having a respective pair of piezoelectric drive elements;

    a first and second secondary support beams supported by the first support beam;

    a third and a fourth secondary support beam supported by the second support beam;

    a seismic mass supported by the first, second, third, and fourth secondary support beams; and

    four piezoelectric sense elements, each of the four piezoelectric sense elements located on a respective one of the first, second, third, and fourth secondary support beams.

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