Storage device state detection method
First Claim
1. A method for detecting a state of a storage device in which an SOH (State of Health) or an SOC (State of Charge) of the storage device is estimated from an internal impedance thereof, the method comprising:
- measuring an internal resistance of the storage device using a first signal with a first frequency at which the internal impedance of the storage device decreases as a temperature rises, and calculating an initial SOH or an initial SOC of the storage device from the measured internal resistance;
measuring the internal impedance of the storage device using a second signal with a second frequency at which the internal impedance of the storage device increases as the temperature rises, and calculating a value of an internal temperature of the storage device from the measured internal impedance; and
estimating the SOH or the SOC using the calculated value of the internal temperature to correct the initial SOH or the initial SOC.
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Accused Products
Abstract
In a storage device state detection method in which the SOH or SOC of the storage device is inferred from the internal impedance of the storage device: the internal resistance of the storage device is measured by using a signal with a first frequency at which the internal impedance is reduced as a temperature is raised, and the initial SOH or initial SOC of the storage device is calculated from the measured value of the internal resistance; the internal impedance is measured by using a signal with a second frequency at which the internal impedance is increased as a temperature is raised, and the internal temperature of the storage device is calculated from the measured value of the internal impedance; and the SOH or SOC is inferred by using the calculated value of the internal temperature to correct the initial SOH or initial SOC.
9 Citations
18 Claims
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1. A method for detecting a state of a storage device in which an SOH (State of Health) or an SOC (State of Charge) of the storage device is estimated from an internal impedance thereof, the method comprising:
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measuring an internal resistance of the storage device using a first signal with a first frequency at which the internal impedance of the storage device decreases as a temperature rises, and calculating an initial SOH or an initial SOC of the storage device from the measured internal resistance; measuring the internal impedance of the storage device using a second signal with a second frequency at which the internal impedance of the storage device increases as the temperature rises, and calculating a value of an internal temperature of the storage device from the measured internal impedance; and estimating the SOH or the SOC using the calculated value of the internal temperature to correct the initial SOH or the initial SOC. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for detecting a state of a storage device in which an SOH (State of Health) or an SOC (State of Charge) of the storage device is estimated from an internal impedance thereof, the method comprising:
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measuring an internal resistance of the storage device using a first signal with a first frequency at which a capacitance component of the internal impedance of the storage device becomes more dominant than an inductance component of the internal impedance, and calculating an initial SOH or an initial SOC of the storage device from the measured internal resistance; measuring the internal impedance of the storage device using a second signal with a second frequency at which the inductance component of the internal impedance of the storage device becomes more dominant than the capacitance component of the internal impedance, and calculating a value of an internal temperature of the storage device from the measured internal impedance; and estimating the SOH or the SOC using the calculated value of the internal temperature to correct the initial SOH or the initial SOC. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for detecting a state of a storage device in which an SOH (State of Health) or an SOC (State of Charge) of the storage device is estimated from an internal impedance thereof, the method comprising:
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measuring an internal resistance of the storage device using a first signal with a first frequency of 1 kHz or lower, and calculating an initial SOH or an initial SOC of the storage device from the measured internal resistance; measuring the internal impedance of the storage device using a second signal with a second frequency of 10 kHz or higher, and calculating a value of an internal temperature of the storage device from the measured internal impedance; and estimating the SOH or the SOC using the calculated value of the internal temperature to correct the initial SOH or the initial SOC. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification