×

Mitigating hot electron program disturb

  • US 9,640,273 B1
  • Filed: 08/25/2016
  • Issued: 05/02/2017
  • Est. Priority Date: 08/25/2016
  • Status: Active Grant
First Claim
Patent Images

1. A three-dimensional (3D) non-volatile storage apparatus, comprising:

  • a plurality of bit lines;

    a common source line;

    a plurality of word lines;

    a plurality of NAND strings of memory cells, each of the NAND strings having a channel, each of the NAND strings having a source end coupled to the common source line and a drain end coupled to a bit line of the plurality of bit lines, each of the memory cells associated with a word line of the plurality of word lines;

    a control circuit in communication with the plurality of bit lines, the common source line, and the plurality of word lines, the control circuit configured to;

    pre-charge a channel of a program inhibited NAND string during a pre-charge phase of a programming operation, the program inhibited NAND string having memory cells connected to a first set of word lines and a second set of word lines, the first set of word lines including a first unselected word line that neighbors a selected word line towards the source end, the second set of word lines including the selected word line and a second unselected word line that neighbors the selected word line towards the drain end;

    during a boosting phase of the programming operation, initially increase a voltage on the first set of word lines by a greater amount than the control circuit initially increases a voltage on the second set of word lines;

    finalize boosting voltages on the first set and the second set of word lines to respective final boosting voltages during the boosting phase of the programming operation; and

    apply a programming voltage to the selected word line during a programming phase of the programming operation.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×