Embedded DRAM in replacement metal gate technology
First Claim
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1. A method comprising:
- forming first and second dummy electrodes on a substrate, each dummy electrode having spacers at opposite sides and being surrounded by an inter-layer dielectric (ILD);
removing the first and second dummy electrodes, forming first and second cavities, respectively;
forming a spin-on glass hardmask over the substrate, the spacers and ILD and filling in the first and second cavities with the spin-on glass hardmask down to an upper surface of the substrate such that the spin-on glass hardmask is in direct contact with the upper surface of the substrate;
forming a photoresist over the second cavity and exposing the first cavity;
forming a deep trench in the substrate through the first cavity;
removing the spin-on glass hardmask; and
forming a capacitor in the first cavity and deep trench and concurrently forming an access transistor in the second cavity.
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Abstract
Methods for forming an eDRAM with replacement metal gate technology and the resulting device are disclosed. Embodiments include forming first and second dummy electrodes on a substrate, each dummy electrode having spacers at opposite sides and being surrounded by an ILD; removing the first and second dummy electrodes, forming first and second cavities, respectively; forming a hardmask over the substrate, exposing the first cavity; forming a deep trench in the substrate through the first cavity; removing the hardmask; and forming a capacitor in the first cavity and deep trench and concurrently forming an access transistor in the second cavity.
17 Citations
18 Claims
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1. A method comprising:
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forming first and second dummy electrodes on a substrate, each dummy electrode having spacers at opposite sides and being surrounded by an inter-layer dielectric (ILD); removing the first and second dummy electrodes, forming first and second cavities, respectively; forming a spin-on glass hardmask over the substrate, the spacers and ILD and filling in the first and second cavities with the spin-on glass hardmask down to an upper surface of the substrate such that the spin-on glass hardmask is in direct contact with the upper surface of the substrate; forming a photoresist over the second cavity and exposing the first cavity; forming a deep trench in the substrate through the first cavity; removing the spin-on glass hardmask; and forming a capacitor in the first cavity and deep trench and concurrently forming an access transistor in the second cavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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forming first and second dummy electrodes over a silicon fin and an adjacent shallow trench isolation (STI) region formed on a substrate, each dummy electrode having spacers at opposite sides and being surrounded by an inter-layer dielectric (ILD); removing the first and second dummy electrodes, forming first and second cavities, respectively; forming a spin-on glass hardmask over the substrate, the spacers and ILD and filling in the first and second cavities with the spin-on glass hardmask down to an upper surface of the substrate such that the spin-on glass hardmask is in direct contact with the upper surface of the substrate; forming a photoresist over the second cavity and exposing a portion of the first cavity over the STI region; forming a deep trench in the STI region through the portion of the first cavity; removing the spin-on glass hardmask; and forming a capacitor in the first cavity and deep trench and concurrently forming an access transistor in the second cavity. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method comprising:
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forming first and second dummy electrodes over a substrate, forming source/drain regions at opposite sides of the second dummy electrode; forming spacers at opposite sides of each of the first and second dummy electrodes and forming an inter-layer dielectric (ILD) over the substrate; chemical mechanical polishing (CMP) the ILD down to a top surface of the first and second dummy electrodes; removing the first and second dummy electrodes, forming first and second cavities, respectively; spinning on a spin-on glass hardmask over the substrate, the spacers and ILD and filling in the first and second cavities with the spin-on glass hardmask down to an upper surface of the substrate such that the spin-on glass hardmask is in direct contact with the upper surface of the substrate; forming a photoresist over the second cavity and exposing the first cavity; etching a deep trench through the first cavity; removing the spin-on glass hardmask; and forming a capacitor in the first cavity and deep trench and concurrently forming an access transistor in the second cavity by; depositing a high-k dielectric layer and a titanium nitride (TiN)/tantalum nitride (TaN) layer, sequentially by atomic layer deposition (ALD), in the first cavity and deep trench and in the second cavity; and filling the first cavity and deep trench and the second cavity with a metal. - View Dependent Claims (18)
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Specification