Thin film transistor array panel and manufacturing method thereof
First Claim
1. A method of manufacturing a thin film transistor array panel, comprising:
- forming a plurality of gate lines on a substrate, wherein each gate line comprises a gate pad;
forming a gate insulating layer on the plurality of gate lines;
forming a semiconductor on the gate insulating layer;
forming a plurality of data lines on the semiconductor, wherein each data line comprises a data pad connected to a source electrode and a drain electrode;
forming a first passivation layer on the plurality of data lines and the drain electrode;
forming a first electric field generating electrode on the first passivation layer;
forming a second passivation layer on the first electric field generating electrode, the second passivation layer comprising a first layer on the first passivation layer and a second layer on the first layer; and
forming a second electric field generating electrode on the second passivation layer,wherein an etching speed of the first passivation layer is slower than an etching speed of the second passivation layer and an etching speed of the second layer of the second passivation layer is faster than an etching speed of the first layer of the second passivation layer, andwherein the first passivation layer is formed at a temperature lower than that of the gate insulating layer, the first layer of the second passivation layer is formed at a temperature lower than that of the first passivation layer, and the second layer of the second passivation layer is formed at a temperature lower than that of the first layer of the second passivation layer.
0 Assignments
0 Petitions
Accused Products
Abstract
A thin film transistor array panel includes a substrate, gate lines, each including a gate pad, a gate insulating layer, data lines, each including a data pad connected to a source and drain electrode, a first passivation layer disposed on the data lines and the drain electrode, a first electric field generating electrode, a second passivation layer disposed on the first electric field generating electrode, and a second electric field generating electrode. The gate insulating layer and the first and second passivation layers include a first contact hole exposing a part of the gate pad, the first and second passivation layers include a second contact hole exposing a part of the data pad, and at least one of the first and second contact holes have a positive taper structure having a wider area at an upper side than at a lower side.
42 Citations
15 Claims
-
1. A method of manufacturing a thin film transistor array panel, comprising:
-
forming a plurality of gate lines on a substrate, wherein each gate line comprises a gate pad; forming a gate insulating layer on the plurality of gate lines; forming a semiconductor on the gate insulating layer; forming a plurality of data lines on the semiconductor, wherein each data line comprises a data pad connected to a source electrode and a drain electrode; forming a first passivation layer on the plurality of data lines and the drain electrode; forming a first electric field generating electrode on the first passivation layer; forming a second passivation layer on the first electric field generating electrode, the second passivation layer comprising a first layer on the first passivation layer and a second layer on the first layer; and forming a second electric field generating electrode on the second passivation layer, wherein an etching speed of the first passivation layer is slower than an etching speed of the second passivation layer and an etching speed of the second layer of the second passivation layer is faster than an etching speed of the first layer of the second passivation layer, and wherein the first passivation layer is formed at a temperature lower than that of the gate insulating layer, the first layer of the second passivation layer is formed at a temperature lower than that of the first passivation layer, and the second layer of the second passivation layer is formed at a temperature lower than that of the first layer of the second passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of manufacturing a thin film transistor array panel, comprising:
-
forming a plurality of gate lines on a substrate, wherein each gate line comprises a gate pad; forming a gate insulating layer on the plurality of gate lines; forming a semiconductor on the gate insulating layer; forming a plurality of data lines on the semiconductor, wherein each data line comprises a data pad connected to a source electrode and a drain electrode; forming a first passivation layer on the plurality of data lines and the drain electrode; forming a first electric field generating electrode on the first passivation layer; forming a second passivation layer on the first electric field generating electrode; forming a second electric field generating electrode on the second passivation layer, wherein an etching speed of the first passivation layer is slower than an etching speed of the second passivation layer; and forming an organic insulating layer between the first passivation layer and the second passivation layer, wherein the organic insulating layer is not formed in regions corresponding to the gate pad and the data pad. - View Dependent Claims (10, 11, 12, 13)
-
-
14. A method of manufacturing a thin film transistor array panel, comprising:
-
forming a plurality of gate lines on a substrate, wherein each gate line comprises a gate pad; forming a gate insulating layer on the plurality of gate lines; forming a semiconductor on the gate insulating layer; forming a plurality of data lines on the semiconductor, wherein each data line comprises a data pad connected to a source electrode and a drain electrode; forming a first passivation layer on the plurality of data lines and the drain electrode; forming a first electric field generating electrode on the first passivation layer; forming a second passivation layer on the first electric field generating electrode; and forming a second electric field generating electrode on the second passivation layer, wherein an etching speed of the first passivation layer is slower than an etching speed of the second passivation layer, wherein a ratio of a combination concentration of nitrogen and hydrogen to a combination concentration of silicon and hydrogen of the first passivation layer is larger than a ratio of a combination concentration of nitrogen and hydrogen to a combination concentration of silicon and hydrogen of the second passivation layer. - View Dependent Claims (15)
-
Specification