Semiconductor device and method for manufacturing the same

• US 9,640,639 B2
• Filed: 02/09/2016
• Issued: 05/02/2017
• Est. Priority Date: 04/12/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Ingham, John C
• Assistant Examiner(s): Hargrove, Frederick B
• Application Number:
  US15/019,040
• Publication Number:
  US 20160155823A1
• Time in Patent Office: 448 Days
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/285 from a gas or vapour, e.g. condensation
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a transistor in which an oxide semiconductor is used for a channel formation region and which has a positive threshold voltage to serve as a normally-off switching element, and the like are provided. Stable electrical characteristics are given to the semiconductor device including the transistor in which an oxide semiconductor film is used for the channel formation region, and thus the semiconductor device has high reliability. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region, source and drain electrode layers, a gate insulating film, and a gate electrode layer are stacked in this order over an oxide insulating film, a conductive layer overlapping with the gate electrode layer with the channel formation region provided therebetween and controlling the electrical characteristics of the transistor is provided in the oxide insulating film including an oxygen excess region.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a conductive layer;

forming an oxide insulating film over the conductive layer, the oxide insulating film having a projection over the conductive layer;

performing oxygen doping treatment on the oxide insulating film to selectively form an oxygen excess region in the oxide insulating film;

performing polishing treatment on the oxide insulating film including the oxygen excess region to planarize the projection after the oxygen doping treatment;

forming an oxide semiconductor layer including a channel formation region over the planarized oxide insulating film;

forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer;

forming a gate insulating film over the oxide semiconductor layer; and

forming a gate electrode layer overlapping with the channel formation region with the gate insulating film interposed therebetween.

2. The method for manufacturing a semiconductor device, according to claim 1, wherein a chemical mechanical polishing method is used for the polishing treatment.

3. The method for manufacturing a semiconductor device, according to claim 1, wherein an ion implantation method is used for the oxygen doping treatment.

4. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide insulating film and the gate insulating film are formed by a chemical vapor deposition method.

5. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of:

forming an insulating film containing aluminum oxide over the oxide semiconductor layer, the source electrode layer, the drain electrode layer, and the gate electrode layer.

6. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of:

forming an insulating film containing aluminum oxide under the conductive layer and the oxide insulating film.

7. The method for manufacturing a semiconductor device, according to claim 1, further comprising the step of:

forming an insulating film containing aluminum oxide between the conductive layer and the oxide insulating film.

8. The method for manufacturing a semiconductor device, according to claim 2, further comprising the step of:

forming a first insulating film containing aluminum oxide under the conductive layer and the oxide insulating film; and

forming a second insulating film containing aluminum oxide over the oxide semiconductor layer, the source electrode layer, the drain electrode layer, and the gate electrode layer,

wherein the first insulating film is in direct contact with the second insulating film, and

wherein the conductive layer, the oxide insulating film, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, the gate insulating film, and the gate electrode layer are between the first insulating film and the second insulating film.