Doped gallium nitride high-electron mobility transistor
First Claim
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1. An apparatus comprising:
- a first aluminum gallium nitride (AlGaN) barrier layer that comprises a first AlGaN sublayer and a first AlGaN spacer sublayer, anda first doped component between the first AlGaN sublayer and the AlGaN spacer sublayera gallium nitride (GaN) channel layer coupled with the first barrier layer to form a first heterojunction;
a second AlGaN barrier layer coupled with the channel layer to form a second heterojunction,wherein the second AlGaN barrier layer comprises a second AlGaN sublayer and a second AlGaN spacer sublayer; and
a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer.
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Abstract
Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT.
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Citations
12 Claims
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1. An apparatus comprising:
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a first aluminum gallium nitride (AlGaN) barrier layer that comprises a first AlGaN sublayer and a first AlGaN spacer sublayer, and a first doped component between the first AlGaN sublayer and the AlGaN spacer sublayer a gallium nitride (GaN) channel layer coupled with the first barrier layer to form a first heterojunction; a second AlGaN barrier layer coupled with the channel layer to form a second heterojunction, wherein the second AlGaN barrier layer comprises a second AlGaN sublayer and a second AlGaN spacer sublayer; and a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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forming a first aluminum gallium nitride (AlGaN) barrier layer on a substrate, wherein the first AlGaN barrier layer comprises a first AlGaN sublayer and a first AlGaN spacer sublayer, and; forming a first doped component between the first AlGaN sublayer and the AlGaN spacer sublayer; forming a gallium nitride (GaN) channel on the first AlGaN barrier layer; forming a second AlGaN barrier layer that comprises a second AlGaN sublayer and a second AlGaN spacer sublayer on the GaN channel; and forming a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer. - View Dependent Claims (8, 9)
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10. A system comprising:
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a transceiver to generate RF signals; and a power amplifier module coupled with the transceiver to amplify the RF signals from the transceiver and to provide amplified RF signals to an antenna switch module, wherein the power amplifier module includes a high-electron mobility transistor (HEMT) comprising; a substrate; a first aluminum gallium nitride (AlGaN) barrier layer disposed on the substrate, and comprising a first AlGaN sublayer and a first AlGaN spacer sublayer; a first doped component between the first AlGaN sublayer and the first AlGaN spacer sublayer; a channel layer disposed on the first AlGaN sublayer; a second aluminum gallium nitride (AlGaN) barrier layer disposed on the channel layer, and comprising a second AlGaN sublayer and a second AlGaN spacer sublayer; and a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer. - View Dependent Claims (11, 12)
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Specification