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Doped gallium nitride high-electron mobility transistor

  • US 9,640,650 B2
  • Filed: 01/16/2014
  • Issued: 05/02/2017
  • Est. Priority Date: 01/16/2014
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a first aluminum gallium nitride (AlGaN) barrier layer that comprises a first AlGaN sublayer and a first AlGaN spacer sublayer, anda first doped component between the first AlGaN sublayer and the AlGaN spacer sublayera gallium nitride (GaN) channel layer coupled with the first barrier layer to form a first heterojunction;

    a second AlGaN barrier layer coupled with the channel layer to form a second heterojunction,wherein the second AlGaN barrier layer comprises a second AlGaN sublayer and a second AlGaN spacer sublayer; and

    a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer.

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