Electrical contact structure with a redistribution layer connected to a stud

• US 9,640,683 B2
• Filed: 03/06/2015
• Issued: 05/02/2017
• Est. Priority Date: 11/07/2013
• Status: Active Grant

• Current Assignee: Xintec Incorporated
• Original Assignee: Xintec Incorporated
• Inventors: Suen, Wei-Luen, Chien, Wei-Ming, Lee, Po-Han, Liu, Tsang-Yu, Ho, Yen-Shih
• Primary Examiner(s): Bradford, Peter
• Application Number:
  US14/640,307
• Publication Number:
  US 20150179831A1
• Time in Patent Office: 788 Days
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 31/02002 Arrangements for conducting electric current to or from the device in operations
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table

Abstract

A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Claims

1. A semiconductor structure, comprising:

a silicon substrate having a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface, wherein the step structure and the tooth structure surround the concave region, and the step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence;

wherein the tooth structure is substantially triangular in cross-section;

a protection layer located on the first surface of the silicon substrate and extending outward from a sidewall of the tooth structure, wherein the sidewall of the tooth structure faces away from the concave region;

an electrical pad located in the protection layer and exposed through the concave region;

an isolation layer located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure;

a redistribution layer located on the isolation layer and the electrical pad;

a conductive layer located on the redistribution layer;

a passivation layer covering the step structure and the tooth structure and having an opening to expose the conductive layer, wherein the passivation layer covers the isolation layer that is on the sidewall of tooth structure and covers the protection layer that extends outward from the sidewall of the tooth structure; and

a conductive structure located on the conductive layer in the opening of the passivation layer.

2. The semiconductor structure of claim 1, further comprising a void among the passivation layer, the step structure, the tooth structure, and the electrical pad.

3. The semiconductor structure of claim 1, wherein a caliber of the concave region is gradually decreased toward the electrical pad.

4. The semiconductor structure of claim 1, wherein a distance between the first and third surfaces is smaller than a distance between the first and second surfaces.

5. The semiconductor structure of claim 1, wherein a height of the step structure is greater than a height of the tooth structure.

6. The semiconductor structure of claim 1, wherein the conductive structure is located on the conductive layer that is on the second surface of the step structure.

7. The semiconductor structure of claim 1, wherein the redistribution layer is made of a material comprising aluminum.

8. The semiconductor structure of claim 1, wherein the conductive layer is made of a material comprising nickel and gold.

9. The semiconductor structure of claim 1, wherein the conductive structure is a solder ball or a conductive protruding block.

10. The semiconductor structure of claim 1, further comprising:

a light transmissive element; and

a supporting layer between the light transmissive element and the protection layer.