Ultraviolet light emitting apparatus
First Claim
1. An ultraviolet light emitting apparatus comprising:
- a chamber including a light emission window, the chamber defining an internal space;
a semiconductor light emitting device on the light emission window, the semiconductor light emitting device including,a first conductivity type nitride semiconductor layer,an undoped nitride semiconductor layer, andan active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer;
an electron beam irradiation source in the internal space of the chamber, the electron beam irradiation source being configured to irradiate an electron beam onto the undoped nitride semiconductor layer; and
first and second connection electrodes configured to apply a voltage from an external power source to the semiconductor light emitting device.
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Accused Products
Abstract
An ultraviolet light emitting apparatus may include a chamber, at least one semiconductor light emitting device, an electron beam irradiation source, and first and second connection electrodes configured to apply a voltage from an external power source to the at least one semiconductor light emitting device. The chamber may define an internal space and include a light emission window. The at least one semiconductor light emitting device may be on the light emission window and include a first conductivity type nitride semiconductor layer, an undoped nitride semiconductor layer, and an active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer. The electron beam irradiation source may be in the internal space of the chamber and configured to irradiate an electron beam onto the undoped nitride semiconductor layer.
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Citations
20 Claims
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1. An ultraviolet light emitting apparatus comprising:
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a chamber including a light emission window, the chamber defining an internal space; a semiconductor light emitting device on the light emission window, the semiconductor light emitting device including, a first conductivity type nitride semiconductor layer, an undoped nitride semiconductor layer, and an active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer; an electron beam irradiation source in the internal space of the chamber, the electron beam irradiation source being configured to irradiate an electron beam onto the undoped nitride semiconductor layer; and first and second connection electrodes configured to apply a voltage from an external power source to the semiconductor light emitting device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An ultraviolet light emitting apparatus comprising:
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a chamber including a light emission window, the chamber defining an internal space; a semiconductor light emitting device on the light emission window, the semiconductor light emitting device including, a first conductivity type semiconductor layer, a capping layer including at least one of an undoped semiconductor and a second conductivity type semiconductor, and an active layer between the first conductivity type semiconductor layer and the capping layer; an electron beam irradiation source in the internal space of the chamber, the electron beam irradiation source being configured to irradiate an electron beam onto the capping layer; first and second connection electrodes connected to the semiconductor light emitting device and drawn outwardly from the chamber; a first driving unit configured to drive the electron beam irradiation source; a second driving unit configured to drive the semiconductor light emitting device through the first and second connection electrodes; and a driving controller configured to control the first and second driving units.
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16. A light emitting apparatus comprising:
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a semiconductor light emitting device including a plurality of nitride semiconductor layers, the plurality of nitride semiconductor layers including a capping layer contacting an active layer, the capping layer including at least one of p-type nitride semiconductor layer and an undoped nitride semiconductor layer; and an electron beam irradiation source configured to irradiate an electron beam onto the capping layer; and first and second electrodes configured to apply a voltage to the semiconductor light emitting device, the active layer being configured to emit light in response to the voltage applied to the semiconductor light emitting device by the first and second electrodes. - View Dependent Claims (17, 18, 19, 20)
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Specification