Carbon nanotube device

• US 9,640,765 B2
• Filed: 06/23/2016
• Issued: 05/02/2017
• Est. Priority Date: 08/07/2013
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Clevenger, Lawrence A., Narayan, Chandrasekhar, Northrop, Gregory A., Radens, Carl J., Sapp, Brian C.
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US15/190,365
• Publication Number:
  US 20160336515A1
• Time in Patent Office: 313 Days
• Field of Search: 257E23039, 257E27084, 257E27092, 257E5104, 257296, 257300, 257301, 257 68, 257 71, 438243, 438386, 438775
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/66439 with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor with an active layer made of a group 13/15 material H01L29/66469
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 71/191 characterised by provisions for the orientation or alignment of the layer to be deposited
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: Y10S 977/742 Carbon nanotubes, CNTs
• CPC Class Codes: Y10S 977/842 for carbon nanotubes or fullerenes

Abstract

Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.

Claims

1. A semiconductor device, comprising:

a layer of carbon nanotubes embedded inside a dielectric layer disposed inside a guiding structure, wherein the carbon nanotubes substantially line bottom and sidewall surfaces of said guiding structure;

a first conductive contact disposed inside said dielectric layer, said first conductive contact being substantially close to but not in contact with said layer of carbon nanotubes; and

a second and a third conductive contacts disposed inside said dielectric layer next to a right side and a left side of said first conductive contact, said second and third conductive contacts being in contact with said layer of carbon nanotubes.

2. The semiconductor device of claim 1, wherein said guiding structure is disposed inside a semiconductor substrate.

3. The semiconductor device of claim 2, wherein said guiding structure is a shallow trench of rectangular shape filled up by said dielectric layer, said rectangular shape of said shallow trench has a long side A and a short side B with A being at least 4 times longer than B.

4. The semiconductor device of claim 1, wherein said layer of carbon nanotubes is directly on top of an insulating layer insulating said carbon nanotubes from underneath semiconductor substrate.

5. A semiconductor device, comprising:

multiple guiding structures within a substrate, each guiding structure of said multiple guiding structures including a layer of carbon nanotubes embedded inside a dielectric layer, wherein the carbon nanotubes substantially line bottom and sidewall surfaces of said guiding structure;

a first conductive contact formed inside said dielectric layer, said first conductive contact being substantially close to but not in contact with said layer of carbon nanotubes; and

a second and a third conductive contacts formed inside said dielectric layer next to a right side and a left side of said first conductive contact, said second and third conductive contacts being in contact with said layer of carbon nanotubes.

6. The semiconductor device of claim 5, wherein said guiding structure is disposed inside a semiconductor substrate.

7. The semiconductor device of claim 5, wherein said guiding structure is a shallow trench of rectangular shape filled up by said dielectric layer, said rectangular shape of said shallow trench has a long side A and a short side B with A being at least 4 times longer than B.

8. The semiconductor device of claim 5, wherein said layer of carbon nanotubes is directly on top of an insulating layer insulating said carbon nanotubes from underneath semiconductor substrate.