Multi-gas straight channel showerhead
First Claim
1. A showerhead apparatus comprising:
- a first plenum disposed within the showerhead apparatus;
a second plenum disposed within the showerhead apparatus;
a third plenum disposed within the showerhead apparatus;
a plurality of straight and parallel first gas flow channels for a first precursor gas formed within the showerhead apparatus and in fluid communication with the first plenum;
a plurality of straight and parallel second gas flow channels for a second precursor gas formed within the showerhead apparatus and in fluid communication with the second plenum;
a plurality of straight and parallel third gas flow channels for a third precursor gas formed within the showerhead apparatus and in fluid communication with the third plenum, wherein the first plenum is disposed between the second plenum and the first, second, and third gas flow channels, and the third plenum is disposed above the second plenum;
a first plurality of gas conduits formed within the showerhead apparatus and coupling the first plenum to the first gas flow channels;
a second plurality of gas conduits formed within the showerhead apparatus and coupling the second plenum to the second gas flow channels;
a third plurality of gas conduits formed within the showerhead apparatus and coupling the third plenum to the third gas flow channels;
a plurality of first gas injection holes formed within the showerhead apparatus and in fluid communication with the first gas flow channels;
a plurality of second gas injection holes formed within the showerhead apparatus and in fluid communication with the second gas flow channels;
a plurality of third gas injection holes formed within the showerhead apparatus and in fluid communication with the third gas flow channels; and
mixing channels formed in a surface of the showerhead apparatus and disposed downstream from the first, second and third gas injection holes for mixing the first precursor gas, the second precursor gas and the third precursor gas.
1 Assignment
0 Petitions
Accused Products
Abstract
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
86 Citations
20 Claims
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1. A showerhead apparatus comprising:
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a first plenum disposed within the showerhead apparatus; a second plenum disposed within the showerhead apparatus; a third plenum disposed within the showerhead apparatus; a plurality of straight and parallel first gas flow channels for a first precursor gas formed within the showerhead apparatus and in fluid communication with the first plenum; a plurality of straight and parallel second gas flow channels for a second precursor gas formed within the showerhead apparatus and in fluid communication with the second plenum; a plurality of straight and parallel third gas flow channels for a third precursor gas formed within the showerhead apparatus and in fluid communication with the third plenum, wherein the first plenum is disposed between the second plenum and the first, second, and third gas flow channels, and the third plenum is disposed above the second plenum; a first plurality of gas conduits formed within the showerhead apparatus and coupling the first plenum to the first gas flow channels; a second plurality of gas conduits formed within the showerhead apparatus and coupling the second plenum to the second gas flow channels; a third plurality of gas conduits formed within the showerhead apparatus and coupling the third plenum to the third gas flow channels; a plurality of first gas injection holes formed within the showerhead apparatus and in fluid communication with the first gas flow channels; a plurality of second gas injection holes formed within the showerhead apparatus and in fluid communication with the second gas flow channels; a plurality of third gas injection holes formed within the showerhead apparatus and in fluid communication with the third gas flow channels; and mixing channels formed in a surface of the showerhead apparatus and disposed downstream from the first, second and third gas injection holes for mixing the first precursor gas, the second precursor gas and the third precursor gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A showerhead apparatus comprising:
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a first plenum disposed within the showerhead apparatus; a second plenum disposed within the showerhead apparatus; a third plenum disposed within the showerhead apparatus; a plurality of straight and parallel first gas flow channels for a first precursor gas formed within the showerhead apparatus and in fluid communication with the first plenum; a plurality of straight and parallel second gas flow channels for a second precursor gas formed within the showerhead apparatus and in fluid communication with the second plenum; a plurality of straight and parallel third gas flow channels for a third precursor gas formed within the showerhead apparatus and in fluid communication with the third plenum, wherein the first plenum is disposed between the second plenum and the first second, and third gas flow channels, and the third plenum is disposed above the second plenum; a first plurality of gas conduits formed within the showerhead apparatus and coupling the first plenum to the first gas flow channels; a second plurality of gas conduits formed within the showerhead apparatus and coupling the second plenum to the second gas flow channels; a third plurality of gas conduits formed within the showerhead apparatus and coupling the third plenum to the third gas flow channels; a plurality of first gas injection holes formed within the showerhead apparatus and in fluid communication with the first gas flow channels; a plurality of second gas injection holes formed within the showerhead apparatus and in fluid communication with the second gas flow channels; a plurality of third gas injection holes formed within the showerhead apparatus and in fluid communication with the third gas flow channels; and heat exchanging channels disposed between sets of the first, second and third gas injection holes, and formed within walls that extend in the direction of the gas injection past the first, second and third gas injection holes toward a substrate processing volume, wherein an exterior of the walls define mixing channels into which a first, second, and third gas are injected through the first, second, and third gas injection holes to be mixed therein. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification