Testing and setting performance parameters in a semiconductor device and method therefor
First Claim
1. A method of setting performance parameters based on temperature in a plurality of semiconductor devices on a contiguous wafer, each semiconductor device including a temperature sensing circuit wherein the wafer includes a plurality of regions, each region including a plurality of semiconductor devices, comprising the steps of:
- testing the operation of circuitry different than the temperature sensing circuit in one of the plurality of semiconductor devices in each region at a plurality of temperatures to determine a plurality of regional performance parameters corresponding to each one of the plurality of regions, each one of the plurality of temperatures in a corresponding one of a plurality of temperature ranges;
whereineach one of the plurality of semiconductor devices includes a performance parameter table and the method further includes the step of writing corresponding regional performance parameters to the performance parameter table for each one of the plurality of semiconductor devices for each corresponding region.
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Abstract
A method of determining temperature ranges and setting performance parameters in a semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. The performance parameters may be set to improve speed parameters and/or decrease current consumption over a wide range of temperature ranges.
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Citations
19 Claims
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1. A method of setting performance parameters based on temperature in a plurality of semiconductor devices on a contiguous wafer, each semiconductor device including a temperature sensing circuit wherein the wafer includes a plurality of regions, each region including a plurality of semiconductor devices, comprising the steps of:
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testing the operation of circuitry different than the temperature sensing circuit in one of the plurality of semiconductor devices in each region at a plurality of temperatures to determine a plurality of regional performance parameters corresponding to each one of the plurality of regions, each one of the plurality of temperatures in a corresponding one of a plurality of temperature ranges;
whereineach one of the plurality of semiconductor devices includes a performance parameter table and the method further includes the step of writing corresponding regional performance parameters to the performance parameter table for each one of the plurality of semiconductor devices for each corresponding region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of setting performance parameters based on temperature in a plurality of semiconductor devices on a contiguous wafer, each semiconductor device including a temperature sensing circuit wherein the wafer includes a plurality of regions, each region including a plurality of semiconductor devices, comprising the steps of:
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testing the operation of circuitry different than the temperature sensing circuit in one of the plurality of semiconductor devices in each region at a plurality of temperatures to determine a plurality of regional performance parameters corresponding to each one of the plurality of regions, each one of the plurality of temperatures in a corresponding one of a plurality of temperature ranges;
whereinthe step of testing includes determining the plurality of regional performance parameters corresponding to each one of the plurality of regions based on a desired operating specification for the plurality of semiconductor devices. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification