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Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

  • US 9,647,119 B1
  • Filed: 07/05/2016
  • Issued: 05/09/2017
  • Est. Priority Date: 12/14/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first transistor comprising a fin arranged on a substrate, the fin having a first relaxed silicon germanium layer arranged on the substrate and a compressively strained silicon germanium layer arranged on the first relaxed silicon germanium layer;

    a second transistor comprising a fin arranged on the substrate, the fin having a second relaxed silicon germanium layer arranged on the substrate and a tensile strained silicon germanium layer arranged on the second relaxed silicon germanium layer, the second relaxed silicon germanium layer comprising a germanium content that is different than the first relaxed silicon germanium layer; and

    a gate arranged on the fin of the first transistor and the fin of the second transistor;

    wherein the compressively strained silicon germanium layer and the tensile strained silicon germanium layer have a germanium content that is substantially the same.

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