Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
First Claim
1. A semiconductor device, comprising:
- a first transistor comprising a fin arranged on a substrate, the fin having a first relaxed silicon germanium layer arranged on the substrate and a compressively strained silicon germanium layer arranged on the first relaxed silicon germanium layer;
a second transistor comprising a fin arranged on the substrate, the fin having a second relaxed silicon germanium layer arranged on the substrate and a tensile strained silicon germanium layer arranged on the second relaxed silicon germanium layer, the second relaxed silicon germanium layer comprising a germanium content that is different than the first relaxed silicon germanium layer; and
a gate arranged on the fin of the first transistor and the fin of the second transistor;
wherein the compressively strained silicon germanium layer and the tensile strained silicon germanium layer have a germanium content that is substantially the same.
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Accused Products
Abstract
A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer.
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Citations
6 Claims
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1. A semiconductor device, comprising:
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a first transistor comprising a fin arranged on a substrate, the fin having a first relaxed silicon germanium layer arranged on the substrate and a compressively strained silicon germanium layer arranged on the first relaxed silicon germanium layer; a second transistor comprising a fin arranged on the substrate, the fin having a second relaxed silicon germanium layer arranged on the substrate and a tensile strained silicon germanium layer arranged on the second relaxed silicon germanium layer, the second relaxed silicon germanium layer comprising a germanium content that is different than the first relaxed silicon germanium layer; and a gate arranged on the fin of the first transistor and the fin of the second transistor; wherein the compressively strained silicon germanium layer and the tensile strained silicon germanium layer have a germanium content that is substantially the same. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification