Semiconductor device, manufacturing method, and electronic apparatus

• US 9,647,146 B2
• Filed: 02/25/2014
• Issued: 05/09/2017
• Est. Priority Date: 03/08/2013
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Wakiyama, Satoru, Takachi, Taizo
• Primary Examiner(s): Payen, Marvin
• Application Number:
  US14/189,068
• Publication Number:
  US 20140252526A1
• Time in Patent Office: 1,169 Days
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 31/02165 using interference filters, e.g. multilayer dielectric filters interference filters G02B5/28
• CPC Class Codes: H01L 31/041 Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Claims

1. A semiconductor device, comprising:

an image pickup device;

a cover glass, wherein the image pickup device and the cover glass are bonded to one another;

a film provided between the image pickup device and the cover glass, wherein the film has a specific gravity value of two or more and is configured to shield an alpha ray that arises from the cover glass; and

a transparent resin filled between the image pickup device and the cover glass,

wherein the film is configured to cover an entire area of the transparent resin within a pixel region.

2. The semiconductor device according to claim 1, wherein the following Expression is satisfied:

AX+BY>

C(in μ

m)

where a thickness of the film is A in μ

m, a thickness of the transparent resin is B in μ

m, the specific gravity of the film is X, a specific gravity of the transparent resin is Y, and a distance between the cover glass and an imaging surface of the image pickup device is C, wherein the distance is calculated as a distance at which an influence of the alpha ray based on a range of the alpha ray emitted from uranium contained in the cover glass is reduced.

3. The semiconductor device according to claim 1, wherein the film is provided on the cover glass.

4. The semiconductor device according to claim 1, wherein the film is provided at a region that corresponds to portions where pixels of the image pickup device are provided.

9. The semiconductor device according to claim 1, wherein the film is provided seamlessly on the cover glass, and wherein the film is configured to cover an area of the cover glass such that the area of the cover glass is equivalent to an area of the film.

10. The semiconductor device according to claim 1, wherein the transparent resin is configured to cover an area between the film and the image pickup device.

11. The semiconductor device according to claim 1, wherein the cover glass and the image pickup device are bonded such that a distance between the cover glass and an imaging surface of the image pickup device is based on the determined specific gravity of the film and a specific gravity of the transparent resin.

12. The semiconductor device according to claim 1, wherein the film that has the specific gravity of two or more is an oxide film.

5. A method of manufacturing a semiconductor device, the method comprising:

forming, on a cover glass, a film that has a specific gravity value of two or more and is configured to shield an alpha ray that arises from the cover glass; and

bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device,

wherein the film is configured to cover an entire area of the transparent resin within a pixel region.

6. The method according to claim 5, wherein the film is formed to have a thickness that satisfies the following Expression:

AX+BY>

C(in μ

m)

where the thickness of the film is A in μ

m, a thickness of the transparent resin is B in μ

m, the specific gravity of the film is X, a specific gravity of the transparent resin is Y, and a distance between the cover glass and an imaging surface of the image pickup device is C, wherein the distance is calculated as a distance at which an influence of the alpha ray based on a range of the alpha ray emitted from uranium contained in the cover glass is reduced.

7. The method according to claim 5, further comprising, removing the film at a portion corresponding to a scribing line after forming the film on the cover glass.

8. An electronic apparatus provided with a semiconductor device and a signal processing section, wherein the signal processing section is configured to process a pixel signal outputted from the semiconductor device, the semiconductor device comprising:

an image pickup device;

a cover glass, wherein the image pickup device and the cover glass are bonded to one another;

a film provided between the image pickup device and the cover glass, wherein the film has a specific gravity value of two or more and is configured to shield an alpha ray that arises from the cover glass; and

a transparent resin filled between the image pickup device and the cover glass,

wherein the film is configured to cover an entire area of the transparent resin within a pixel region.