Memory device based on conductance switching in polymer/electrolyte junctions
First Claim
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1. A three-terminal non-volatile memory device, comprising:
- at least a first electrode and a second electrode provided on a substrate, the first and second electrodes being in contact with an organic semi-conductive polymer and separated from each other such that, the first electrode and second electrode electronically determine a first redox state, a second redox state, or a third redox state of the organic semiconductive polymer;
an active layer comprising the organic semiconductive polymer electrically connecting the first and second electrodes;
an electrolyte layer in contact with the active layer, wherein the active layer and the electrolyte are two separate layers; and
a third electrode that is not in contact with the first electrode, the second electrode, and the organic semiconductive polymer;
whereinthe organic semiconductive polymer has the first redox state in which the organic semiconductive polymer exhibits conductivity in a neutral state of 10−
8 S/cm to 10−
3 S/cm at room temperature, the second redox state in which the organic semiconductive polymer exhibits conductivity greater than 0.001 S/cm to 10 S/cm at room temperature, and the third redox state in which the organic semiconductive polymer exhibits conductivity less than 0.001 S/cm or less than 10 S/cm at room temperature, wherein a “
read”
circuit does not pass through the electrolyte, and a write/erase”
circuit passes current through the electrolyte, further wherein the organic semiconductive polymer contains mobile ions.
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Abstract
A non-volatile memory device including at least a first electrode and a second electrode provided on a substrate, the first and second electrodes being separated from each other; an organic semiconductive polymer electrically connecting the first and second electrodes; an electrolyte in contact with the organic semiconductive polymer; and a third electrode that is not in contact with the first electrode, the second electrode, and the organic semiconductive polymer; wherein the organic semiconductive polymer has a first redox state in which it exhibits a first conductivity, and a second redox state in which it exhibits a second conductivity.
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Citations
22 Claims
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1. A three-terminal non-volatile memory device, comprising:
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at least a first electrode and a second electrode provided on a substrate, the first and second electrodes being in contact with an organic semi-conductive polymer and separated from each other such that, the first electrode and second electrode electronically determine a first redox state, a second redox state, or a third redox state of the organic semiconductive polymer; an active layer comprising the organic semiconductive polymer electrically connecting the first and second electrodes; an electrolyte layer in contact with the active layer, wherein the active layer and the electrolyte are two separate layers; and a third electrode that is not in contact with the first electrode, the second electrode, and the organic semiconductive polymer;
whereinthe organic semiconductive polymer has the first redox state in which the organic semiconductive polymer exhibits conductivity in a neutral state of 10−
8 S/cm to 10−
3 S/cm at room temperature, the second redox state in which the organic semiconductive polymer exhibits conductivity greater than 0.001 S/cm to 10 S/cm at room temperature, and the third redox state in which the organic semiconductive polymer exhibits conductivity less than 0.001 S/cm or less than 10 S/cm at room temperature, wherein a “
read”
circuit does not pass through the electrolyte, and a write/erase”
circuit passes current through the electrolyte, further wherein the organic semiconductive polymer contains mobile ions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A system comprising:
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a memory; and a memory controller configured to control the execution of programming and erase operations within the memory, wherein the memory comprises a three-terminal non-volatile memory device, the three-terminal non-volatile memory device including; at least a first electrode and a second electrode provided on a substrate, the first and second electrodes being in contact with an organic semiconductive polymer and separated from each other such that, the first electrode and second electrode electronically determine a first redox state, a second redox state, or a third redox state of the organic semiconductive polymer; an active layer comprising the organic semiconductive polymer electrically connecting the first and second electrodes; an electrolyte layer in contact with the active, wherein the active layer and the electrolyte are two separate layers; and a third electrode that is not in contact with the first electrode, the second electrode, and the organic semiconductive polymer;
whereinthe organic semiconductive polymer has the first redox state in which the organic semiconductive polymer exhibits a first conductivity in a neutral state of 10−
8 S/cm to 10−
3 S/cm at room temperature, the second redox state in which the organic semiconductive polymer exhibits conductivity greater than 0.001 S/cm to 10 S/cm at room temperature, and the third redox state in which the organic semiconductive polymer exhibits conductivity less than about 0.001 S/cm or less than 10 S/cm, at room temperature, wherein a “
read”
circuit does not pass through the electrolyte, and a write/erase”
circuit passes current through the electrolyte, further wherein the organic semiconductive polymer contains mobile ions.
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Specification