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Bulk fin STI formation

  • US 9,653,359 B2
  • Filed: 09/29/2015
  • Issued: 05/16/2017
  • Est. Priority Date: 09/29/2015
  • Status: Active Grant
First Claim
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1. A method of forming a fin device in a bulk substrate, the method comprising the steps of:

  • forming fins and trenches in between the fins in the bulk substrate, wherein the fins are formed having an initial width Winitial that is from about 10% to about 30%, and ranges therebetween, greater than a desired final width of the fins of from about 2 nm to about 90 nm, and ranges therebetween, to compensate for fin width lost during formation of a thermal oxide; and

    annealing the bulk substrate in an oxygen ambient under conditions sufficient to form the thermal oxide on sidewalls of the fins which completely fills the trenches and is void-free, wherein the thermal oxide forms a shallow trench isolation (STI) region between each of the fins, and wherein a base of each of the fins has a faceted shape due to the annealing being used to form the thermal oxide that completely fills the trenches.

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