Bulk fin STI formation
First Claim
1. A method of forming a fin device in a bulk substrate, the method comprising the steps of:
- forming fins and trenches in between the fins in the bulk substrate, wherein the fins are formed having an initial width Winitial that is from about 10% to about 30%, and ranges therebetween, greater than a desired final width of the fins of from about 2 nm to about 90 nm, and ranges therebetween, to compensate for fin width lost during formation of a thermal oxide; and
annealing the bulk substrate in an oxygen ambient under conditions sufficient to form the thermal oxide on sidewalls of the fins which completely fills the trenches and is void-free, wherein the thermal oxide forms a shallow trench isolation (STI) region between each of the fins, and wherein a base of each of the fins has a faceted shape due to the annealing being used to form the thermal oxide that completely fills the trenches.
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Accused Products
Abstract
Techniques for STI in fin device structures formed on bulk substrates are provided. In one aspect, a method of forming a fin device in a bulk substrate includes the steps of: forming fins and trenches in between the fins in the bulk substrate; and annealing the bulk substrate in an oxygen ambient under conditions sufficient to form a thermal oxide on sidewalls of the fins and which completely fills the trenches, wherein the thermal oxide forms a STI region between each of the fins. A method of forming a fin device in a bulk substrate is also provided where a deposited STI oxide is used in combination with a thermal oxide. A fin device is also provided.
14 Citations
16 Claims
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1. A method of forming a fin device in a bulk substrate, the method comprising the steps of:
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forming fins and trenches in between the fins in the bulk substrate, wherein the fins are formed having an initial width Winitial that is from about 10% to about 30%, and ranges therebetween, greater than a desired final width of the fins of from about 2 nm to about 90 nm, and ranges therebetween, to compensate for fin width lost during formation of a thermal oxide; and annealing the bulk substrate in an oxygen ambient under conditions sufficient to form the thermal oxide on sidewalls of the fins which completely fills the trenches and is void-free, wherein the thermal oxide forms a shallow trench isolation (STI) region between each of the fins, and wherein a base of each of the fins has a faceted shape due to the annealing being used to form the thermal oxide that completely fills the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 16)
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10. A method of forming a fin device in a bulk substrate, the method comprising the steps of:
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forming fins and trenches in between the fins in the bulk substrate, wherein the fins are formed having an initial width Winitial that is from about 10% to about 30%, and ranges therebetween, greater than a desired final width of the fins of from about 2 nm to about 90 nm, and ranges therebetween, to compensate for fin width lost during formation of a thermal oxide; depositing an STI oxide into the trenches, wherein the STI oxide partially fills the trenches such that voids are present within the trenches; and annealing the bulk substrate in an oxygen ambient under conditions sufficient to form the thermal oxide on sidewalls of the fins and filling the voids present within the trenches, wherein STI oxide and the thermal oxide form a STI region between each of the fins. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification