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Semiconductor device and method of manufacturing the same

  • US 9,653,400 B2
  • Filed: 12/30/2015
  • Issued: 05/16/2017
  • Est. Priority Date: 01/19/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first porous interlayer insulating film having a low dielectric constant and including a first region and a second region;

    a second interlayer insulating film formed on the first interlayer insulating film in the first region;

    a plurality of first conductive patterns formed in the second interlayer insulating film such that they are spaced apart from each other;

    at least one second conductive pattern formed in the first interlayer insulating film in the second region; and

    air gaps disposed at lateral sides of the plurality of first conductive patterns.

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