Microelectronic devices and methods for filling vias in microelectronic devices

• US 9,653,420 B2
• Filed: 06/09/2014
• Issued: 05/16/2017
• Est. Priority Date: 11/13/2003
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hiatt, William M., Kirby, Kyle K.
• Primary Examiner(s): Ahmed, Selim
• Assistant Examiner(s): Bell, Lauren R
• Application Number:
  US14/300,004
• Publication Number:
  US 20140284796A1
• Time in Patent Office: 1,072 Days
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/73207 Bump and wire connectors
• CPC Class Codes: H01L 2224/73257 Bump and wire connectors
• CPC Class Codes: H01L 2225/06506 Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.

Claims

1. A packaged microelectronic device comprising:

a die having a first side and a second side opposite to the first side, the die further having an integrated circuit positioned between the first and second sides;

a bond-pad positioned on the first side of the die and electrically coupled to the integrated circuit;

a passage extending completely through the die and aligned with and extending through the bond-pad;

a metallic wetting agent applied to the bond-pad around the passage, wherein the wetting agent directly contacts the bond-pad and extends, in a direction parallel to the first side of the die, beyond the bond-pad to cover a portion of the passage;

a first conductive material deposited in a first portion of the passage adjacent to the first side of the die to form a conductive plug electrically connected to the bond-pad;

a second conductive material deposited in a second portion of the passage in contact with the conductive plug to at least generally fill the passage from the conductive plug to the second side of the die; and

an insulative layer deposited in the passage, wherein the first conductive material directly contacts the insulative layer between the first side of the die and the second side of the die, and wherein the second conductive material directly contacts the insulative layer between the first side of the die and the second side of the die.

2. The packaged microelectronic device of claim 1 wherein the insulative layer is deposited in the passage between the die and the first conductive material and between the die and the second conductive material.

3. The packaged microelectronic device of claim 1 wherein the first conductive material includes an electronic ink.

4. The packaged microelectronic device of claim 1 wherein the first conductive material includes a nano-particle deposition.

5. A microfeature workpiece having a first side and a second side opposite to the first side,

the microfeature workpiece comprising:

at least one die;

a bond-pad formed on the first side of the microfeature workpiece;

a passage extending completely through the bond-pad and the die from the first side of the microfeature workpiece to the second side of the microfeature workpiece;

a metallic wetting agent applied to the bond-pad around the passage, wherein the wetting agent directly contacts the bond-pad and extends, in a direction parallel to the first side of the microfeature workpiece, beyond the bond-pad to cover a portion of the passage;

a first conductive material deposited in a first portion of the passage adjacent to the first side of the microfeature workpiece to form a conductive plug electrically connected to the bond-pad;

a second conductive material deposited in a second portion of the passage in contact with the conductive plug to at least generally fill the passage from the conductive plug to the second side of the microfeature workpiece, wherein the first conductive material is different than the second conductive material; and

an insulative layer deposited in the passage, wherein the first conductive material directly contacts the insulative layer between the first side of the microfeature workpiece and the second side of the microfeature workpiece, and wherein the second conductive material directly contacts the insulative layer between the first side of the microfeature workpiece and the second side of the microfeature workpiece.

6. The microfeature workpiece of claim 5 wherein the first conductive material includes an electronic ink.

7. The microfeature workpiece of claim 5 wherein the first conductive material includes a nano-particle deposition.

8. The microfeature workpiece of claim 5 wherein the insulative layer is deposited in the passage between the die and the first conductive material and between the die and the second conductive material.

9. The microfeature workpiece of claim 5, further comprising a metallic layer formed on the first side of the microfeature workpiece.

10. The microfeature workpiece of claim 5 wherein the bond-pad is formed on the die.

11. A microelectronic device set comprising:

a first microelectronic device having;

a first die with a first integrated circuit and a first bond-pad electrically coupled to the first integrated circuit, the first die further including a passage extending completely through the first die and the first bond-pad, and a metallic wetting agent applied to the first bond-pad around the passage, wherein the wetting agent directly contacts the first bond-pad and extends, in a direction perpendicular to the passage, beyond the first bond-pad to cover a portion of the passage; and

a conductive interconnect deposited in the passage, the conductive interconnect including a first conductive material deposited in a first portion of the passage to form a conductive plug in direct contact with the wetting agent and having a boundary in the passage, and a second conductive material deposited in a second portion of the passage, wherein the first conductive material is in direct contact with inner walls of the passage, and wherein the second conductive material is in direct contact with the inner walls of the passage and the boundary of the conductive plug to at least generally fill the passage; and

at least a second microelectronic device having a second die with a second integrated circuit and a second bond-pad electrically coupled to the second integrated circuit, wherein the second bond-pad is electrically coupled to the conductive interconnect of the first microelectronic device.

12. The microelectronic device set of claim 11, further comprising an insulative layer deposited in the passage between the first die and the first conductive material and between the first die and the second conductive material, wherein the insulative layer defines the inner walls of the passage.

13. The microelectronic device set of claim 11 wherein the first microelectronic device is attached to the second microelectronic device in a stacked-die arrangement.

14. The microelectronic device set of claim 11, further comprising a solder ball disposed between the conductive interconnect of the first microelectronic device and the second bond-pad of the second microelectronic device to electrically couple the first bond-pad to the second bond-pad.

15. The microelectronic device set of claim 11 wherein the passage is a first passage, wherein the second microelectronic device further includes a second passage extending through the second die and the second bond-pad, and wherein the second passage is completely filled with a third conductive material.

16. The microelectronic device set of claim 11 wherein the first microelectronic device further includes a redistribution layer formed on the first die, the redistribution layer including a conductive line having a first end portion attached to the first bond-pad and a second end portion positioned outward of the first end portion, wherein the second end portion is configured to receive electrical signals and transmit the signals to at least the first integrated circuit of the first die and the second integrated circuit of the second die.

17. The microelectronic device set of claim 11 wherein the first microelectronic device further includes an insulative layer deposited in the passage, wherein the insulative layer defines the inner walls of the passage, and wherein the second conductive material contacts the conductive plug and the insulative layer.

18. A microelectronic device set comprising:

a first microelectronic device having;

a first die having a first side and a second side opposite to the first side, the first die further having a first integrated circuit and a first bond-pad electrically coupled to the first integrated circuit, the first die further including a passage aligned with and extending through the first bond-pad, and a metallic wetting agent applied to the first bond-pad around the passage, wherein the wetting agent directly contacts the first bond-pad and extends, in a direction parallel to the first side of the first die, beyond the first bond-pad to cover a portion of the passage;

an insulative layer deposited in the passage; and

a conductive interconnect deposited in the passage, the conductive interconnect including a first conductive material deposited in a first portion of the passage to form a conductive plug in direct contact with the wetting agent on the first bond-pad, and a second conductive material deposited in a second portion of the passage to at least generally fill the passage, wherein the first conductive material directly contacts the insulative layer between the first side of the die and the second side of the die, wherein the second conductive material contacts the conductive plug, and wherein the second conductive material directly contacts the insulative layer between the first side of the die and the second side of the die; and

at least a second microelectronic device having a second die with a second integrated circuit and a second bond-pad electrically coupled to the second integrated circuit, wherein the second bond-pad is electrically coupled to the first bond-pad of the first microelectronic device.

19. The microelectronic device set of claim 18 wherein the insulative layer is deposited in the passage between the first die and the first conductive material and between the first die and the second conductive material.

20. The microelectronic device set of claim 18 wherein the first conductive material includes an electronic ink.

21. The microelectronic device set of claim 18 wherein the first conductive material includes a nano-particle deposition.