Semiconductor device including strained finFET
First Claim
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1. A semiconductor device, comprising:
- at least one semiconductor fin on an upper surface of a base substrate, the at least one semiconductor fin including a strained active semiconductor portion interposed between a protective cap layer and the base substrate; and
a gate stack that wraps around the at least one semiconductor fin, the gate stack including a metal gate element interposed between a pair of first cap segments of the protective cap layer, wherein the protective cap layer includes first cap segment comprising a semiconductor material and having a first height and a second cap segment having a second height to define a non-uniform profile of the protective cap layer, the first cap segment extending from an upper surface of the strained active semiconductor portion and formed against sidewalls of the metal gate element.
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Abstract
A semiconductor device includes at least one semiconductor fin on an upper surface of a base substrate. The at least one semiconductor fin includes a strained active semiconductor portion interposed between a protective cap layer and the base substrate. A gate stack wraps around the at least one semiconductor fin. The gate stack includes a metal gate element interposed between a pair of first cap segments of the protective cap layer. The strained active semiconductor portion is preserved following formation of the fin via the protective cap layer.
23 Citations
7 Claims
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1. A semiconductor device, comprising:
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at least one semiconductor fin on an upper surface of a base substrate, the at least one semiconductor fin including a strained active semiconductor portion interposed between a protective cap layer and the base substrate; and a gate stack that wraps around the at least one semiconductor fin, the gate stack including a metal gate element interposed between a pair of first cap segments of the protective cap layer, wherein the protective cap layer includes first cap segment comprising a semiconductor material and having a first height and a second cap segment having a second height to define a non-uniform profile of the protective cap layer, the first cap segment extending from an upper surface of the strained active semiconductor portion and formed against sidewalls of the metal gate element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification